STP16NS25 STMicroelectronics, STP16NS25 Datasheet - Page 2

MOSFET N-CH 250V 16A TO-220

STP16NS25

Manufacturer Part Number
STP16NS25
Description
MOSFET N-CH 250V 16A TO-220
Manufacturer
STMicroelectronics
Series
MESH OVERLAY™r
Datasheet

Specifications of STP16NS25

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
280 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
83nC @ 10V
Input Capacitance (ciss) @ Vds
1270pF @ 25V
Power - Max
140W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3183-5

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THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
2/9
Rthj-case
Rthj-amb
V
Symbol
Symbol
Symbol
Symbol
R
V
(BR)DSS
g
I
I
C
DS(on)
C
E
GS(th)
C
fs
I
GSS
DSS
AR
T
oss
AS
rss
iss
(1)
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
Parameter
Parameter
Parameter
j
DS
= 25 °C, I
= 0)
GS
= 0)
D
= I
j
max)
AR
Parameter
, V
DD
I
V
V
V
V
V
V
I
D
D
V
= 50 V)
DS
DS
GS
DS
GS
DS
DS
= 8 A
= 250 µA, V
= Max Rating
= Max Rating, T
= V
> I
= ± 20 V
= 10V, I
= 25V, f = 1 MHz, V
D(on)
Test Conditions
Test Conditions
Test Conditions
GS
, I
D
x R
D
= 8 A
GS
= 250µA
DS(on)max,
= 0
C
= 125 °C
GS
= 0
TO-220
0.9
Min.
Min.
Min.
250
2
62.5
300
Max Value
1270
600
Typ.
Typ.
0.23
Typ.
190
16
15
74
3
TO-220FP
3
Max.
±100
Max.
Max.
0.28
10
1
4
°C/W
°C/W
°C/W
Unit
Unit
Unit
Unit
mJ
°C
µA
µA
nA
pF
pF
pF
A
V
V
S

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