STV160NF02LT4 STMicroelectronics, STV160NF02LT4 Datasheet - Page 3

• Manufacturer Part Number: STV160NF02LT4
• Description: MOSFET N-CH 20V 160A POWERSO-10
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STV160NF02LT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.5 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 160nC @ 10V
• Input Capacitance (ciss) @ Vds: 4800pF @ 15V
• Power - Max: 210W
• Mounting Type: Surface Mount
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3251-2

ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Safe Operating Area
Symbol
Symbol
Symbol
I
V
SDM
t
t
t
t
I
SD
r(Voff)
d(on)
Q
Q
d(off)
d(off)
RRM
I
2. Pulse width limited by safe operating area.
Q
Q
SD
t
t
t
t
t
rr
gd
r
gs
c
f
f
g
rr
(2)
(1)
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Turn-off-Delay Time
Fall Time
Turn-off Delay Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Parameter
Parameter
Parameter
V
R
(see test circuit, Figure 3)
V
V
I
I
V
(see test circuit, Figure 5)
V
R
(see test circuit, Figure 5)
Vclamp = 16 V, I
R
SD
SD
DD
G
DD
GS
DD
DD
G
G
= 4.7
= 4.7
= 4.7
= 160 A, V
= 80 A, di/dt = 100A/µs,
= 10 V, I
= 16 V, I
= 10 V
= 10 V, I
= 15V, T
Test Conditions
Test Conditions
Test Conditions
V
V
V
GS
D
D
D
j
GS
GS
= 25°C
GS
= 80 A
= 160 A,
= 80 A,
= 10V
= 10 V
D
= 10V
Thermal Impedance
= 0
= 40 A
Min.
Min.
Min.
Typ.
Typ.
Typ.
800
115
225
240
140
200
28
15
45
90
80
80
40
5
STV160NF02L
Max.
Max.
Max.
160
160
640
1.5
Unit
Unit
Unit
nC
nC
nC
nC
ns
ns
ns
ns
ns
ns
ns
ns
ns
A
A
V
A
3/8