STY60NK30Z STMicroelectronics, STY60NK30Z Datasheet - Page 5

• Manufacturer Part Number: STY60NK30Z
• Description: MOSFET N-CH 300V 60A MAX247
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STY60NK30Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 220nC @ 10V
• Input Capacitance (ciss) @ Vds: 7200pF @ 25V
• Power - Max: 450W
• Mounting Type: Through Hole
• Package / Case: MAX247™
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.045 Ohm @ 10 V
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 60 A
• Power Dissipation: 450000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4432-5

Gate Charge vs Gate-source Voltage
Normalized Gate Thereshold Voltage vs Temp.
Source-drain Diode Forward Characteristics
Capacitance Variations
Normalized On Resistance vs Temperature
STY60NK30Z
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