IRFR12N25DPBF International Rectifier, IRFR12N25DPBF Datasheet - Page 2

• Manufacturer Part Number: IRFR12N25DPBF
• Description: MOSFET N-CH 250V 14A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR12N25DPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 260 mOhm @ 8.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 810pF @ 25V
• Power - Max: 144W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFR12N25DPBF

Diode Characteristics
Dynamic @ T
Avalanche Characteristics
Static @ T
E
I
E
V
∆V
R
V
I
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
V
t
Q
t
AR
SM
DSS
GSS
d(on)
r
d(off)
f
S
rr
on
fs
2
AS
AR
SD
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
rr
g
gs
gd
(BR)DSS
eff.
/∆T
J
Breakdown Voltage Temp. Coefficient
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Drain-to-Source Leakage Current
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
–––
250
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
3.0
Min. Typ. Max. Units
6.8
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
0.29
1100 –––
–––
–––
–––
140
710
–––
––– 0.26
–––
–––
–––
–––
––– -100
–––
810
130
130
5.8
9.1
9.2
23
12
25
16
22
50
–––
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.5
5.0
8.7
25
35
19
14
56
V/°C
nC
µA
nA
nC
ns
pF
ns
V
Ω
V
S
V
Typ.
–––
–––
–––
I
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „
V
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
Reference to 25°C, I
D
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
G
GS
GS
DS
GS
GS
GS
= 8.4A
= 8.4A
= 25°C, I
= 25°C, I
= 6.8Ω
= V
= 200V, V
= 160V, V
= 25V, I
= 200V
= 25V
= 0V, I
= 10V, I
= 30V
= -30V
= 10V, „
= 125V
= 10V „
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
Conditions
DS
DS
= 250µA
Conditions
Conditions
= 8.4A, V
= 8.4A
= 250µA
= 8.4A
= 8.4A
GS
GS
= 0V to 200V …
Max.
= 1.0V, ƒ = 1.0MHz
= 200V, ƒ = 1.0MHz
250
8.4
14
= 0V, T
= 0V
www.irf.com
D
= 1mA †
GS
„
J
G
= 0V
= 150°C
Units
S
+L
mJ
mJ
A
„
D
D
S
)