IRFR12N25DPBF International Rectifier, IRFR12N25DPBF Datasheet - Page 3

• Manufacturer Part Number: IRFR12N25DPBF
• Description: MOSFET N-CH 250V 14A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR12N25DPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 260 mOhm @ 8.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 810pF @ 25V
• Power - Max: 144W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFR12N25DPBF

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100.00
0.001
10.00
Fig 3. Typical Transfer Characteristics
0.01
Fig 1. Typical Output Characteristics
100
1.00
0.10
0.01
0.1
10
1
0.1
5.0
TOP
BOTTOM 5.0V
T J = 25°C
V DS , Drain-to-Source Voltage (V)
VGS
V GS , Gate-to-Source Voltage (V)
15V
7.0
12V
10V
8.0V
7.0V
6.0V
5.5V
1
9.0
20µs PULSE WIDTH
Tj = 25°C
V DS = 15V
20µs PULSE WIDTH
5.0V
11.0
10
T J = 175°C
13.0
100
15.0
100
0.1
Fig 2. Typical Output Characteristics
10
1
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Fig 4. Normalized On-Resistance
0.1
-60
TOP
BOTTOM 5.0V
I
D
-40
=
14A
V DS , Drain-to-Source Voltage (V)
VGS
-20
T , Junction Temperature
15V
12V
10V
Vs. Temperature
8.0V
7.0V
6.0V
5.5V
J
0
1
20
40
20µs PULSE WIDTH
Tj = 175°C
60
80
5.0V
10
100 120 140 160 180
( C)
V
°
GS
=
10V
3
100