IRFR12N25DPBF International Rectifier, IRFR12N25DPBF Datasheet - Page 4

• Manufacturer Part Number: IRFR12N25DPBF
• Description: MOSFET N-CH 250V 14A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR12N25DPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 260 mOhm @ 8.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 810pF @ 25V
• Power - Max: 144W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFR12N25DPBF

10000
4
1000
100.00
100
10.00
10
1.00
0.10
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
0.0
Drain-to-Source Voltage
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V SD , Source-toDrain Voltage (V)
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
10
1.0
T J = 25°C
Crss
Coss
Ciss
f = 1 MHZ
100
2.0
V GS = 0V
SHORTED
1000
3.0
1000
100
0.1
Fig 8. Maximum Safe Operating Area
10
12
10
1
7
5
2
0
0
Fig 6. Typical Gate Charge Vs.
1
I
D
Tc = 25°C
Tj = 175°C
Single Pulse
=
Gate-to-Source Voltage
8.4A
V DS , Drain-toSource Voltage (V)
Q , Total Gate Charge (nC)
5
G
10
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
V
V
V
DS
DS
DS
= 200V
= 125V
= 50V
15
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100
20
10msec
100µsec
1msec
1000
25