IRFR12N25DPBF International Rectifier, IRFR12N25DPBF Datasheet - Page 6

• Manufacturer Part Number: IRFR12N25DPBF
• Description: MOSFET N-CH 250V 14A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR12N25DPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 260 mOhm @ 8.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 810pF @ 25V
• Power - Max: 144W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFR12N25DPBF

Fig 12a. Unclamped Inductive Test Circuit
6
Fig 12b. Unclamped Inductive Waveforms
Fig 13a. Basic Gate Charge Waveform
I
AS
V
G
R G
20V
V DS
Q
GS
t p
t p
I AS
D.U.T
Q
Charge
0.01 Ω
L
Q
GD
G
V
(BR)DSS
15V
DRIVER
+
-
V DD
A
550
440
330
220
110
0
25
Fig 12c. Maximum Avalanche Energy
Fig 13b. Gate Charge Test Circuit
Starting T , Junction Temperature
50
12V
V
GS
Same Type as D.U.T.
J
Vs. Drain Current
Current Regulator
75
.2µF
50KΩ
3mA
Current Sampling Resistors
100
.3µF
I
G
TOP
BOTTOM
125
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D.U.T.
I
D
150
+
-
V
DS
( C)
°
I D
3.4A
5.9A
8.4A
175