STB20NM60-1 STMicroelectronics, STB20NM60-1 Datasheet - Page 5

• Manufacturer Part Number: STB20NM60-1
• Description: MOSFET N-CH 600V 20A I2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB20NM60-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Input Capacitance (ciss) @ Vds: 1500pF @ 25V
• Power - Max: 192W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5383-5; STB20NM60-1

STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Symbol
Symbol
I
V
SDM
t
t
I
I
SD
d(on)
d(off)
RRM
RRM
I
Q
Q
SD
t
t
t
t
rr
rr
r
f
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
I
I
V
(see Figure 20)
I
T
(see Figure 20)
V
R
(see Figure 15)
SD
SD
SD
j
DD
DD
G
= 150°C, V
=20A, di/dt=100A/µs,
=20A, di/dt=100A/µs,
= 4.7Ω V
= 20 A, V
Test conditions
Test conditions
= 60 V
= 300 V, I
GS
GS
DD
D
= 10 V
= 10 A
= 0
= 60 V
Electrical characteristics
Min.
Min
Typ.
Typ.
390
510
6.5
25
26
25
20
42
11
5
Max.
Max
1.5
20
80
Unit
Unit
µC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
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