STP14NK60Z STMicroelectronics, STP14NK60Z Datasheet - Page 5

• Manufacturer Part Number: STP14NK60Z
• Description: MOSFET N-CH 600V 13.5A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP14NK60Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 13.5A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 75nC @ 10V
• Input Capacitance (ciss) @ Vds: 2220pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STP14NK60Z-STP14NK60ZFP-STB14NK60Z-STB14NK60Z-1-STW14NK60Z Electrical characteris-
2
Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
C
V
Symbol
Symbol
R
CASE
V
oss eq
(BR)DSS
g
C
I
I
inceases from 0 to 80% V
DS(on)
C
C
GS(th)
Q
Q
DSS
GSS
fs
Q
oss
oss eq.
rss
iss
gs
gd
g
(1)
=25°C unless otherwise specified)
(2)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
DSS
V
V
V
V
V
I
V
V
V
V
V
D
GS
GS
DS
DS
DD
DS
DS
GS
DS
GS
= 1mA, V
=0, V
=480V, I
= V
= 10V, I
=15V, I
=25V, f=1 MHz, V
=10V
= Max rating,
= Max rating @125°C
= ±30V
Test conditions
Test conditions
GS
DS
, I
D
D
GS
D
=0V to 480V
D
= 6A
= 6A
= 100µA
= 12A
= 0
GS
=0
Min.
600
3
Min. Typ. Max.
Typ.
3.75
0.45
2220
13.2
38.6
240
122
11
57
75
oss
Max.
±
4.5
0.5
when V
50
10
1
DS
Unit
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
pF
V
V
Ω
S
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