STB25NM60N-1 STMicroelectronics, STB25NM60N-1 Datasheet - Page 8

• Manufacturer Part Number: STB25NM60N-1
• Description: MOSFET N-CH 600V 21A I2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB25NM60N-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 84nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 50V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5730

Electrical characteristics
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Figure 14. Normalized gate threshold voltage
Figure 16. Source-drain diode forward
vs temperature
characteristics
STB25NM60Nx - STF25NM60N - STP25NM60N - STW25NM60N
Figure 15. Normalized on resistance vs
Figure 17. Normalized B
temperature
VDSS
vs temperature