STD30NF06 STMicroelectronics, STD30NF06 Datasheet - Page 3

• Manufacturer Part Number: STD30NF06
• Description: MOSFET N-CH 60V 28A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD30NF06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 58nC @ 10V
• Input Capacitance (ciss) @ Vds: 1750pF @ 25V
• Power - Max: 70W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5734-2

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
(
Safe Operating Area
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Pulse width limited by safe operating area.
Symbol
Symbol
Symbol
I
V
SDM ( )
t
t
I
Q
Q
d(on)
d(off)
SD (*)
RRM
I
Q
Q
SD
t
t
t
rr
gs
gd
r
f
rr
g
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-off Delay Time
Fall Time
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
Parameter
V
(Resistive Load, Figure 3)
V
V
R
(Resistive Load, Figure 3)
I
I
V
(see test circuit, Figure 5)
SD
SD
R
DD
DD
DD
DD
G
G
= 4.7
= 28 A
= 28 A
= 30 V
= 48V I
= 30 V
= 30 V
= 4.7
Test Conditions
Test Conditions
Test Conditions
D
= 38A V
Thermal Impedance
di/dt = 100A/µs
V
V
GS
GS
I
T
D
V
j
= 10 V
= 150°C
GS
= 19 A
I
= 0
D
GS
= 19 A
= 10 V
= 10V
Min.
Min.
Min.
Typ.
Typ.
Typ.
100
260
9.5
5.5
20
43
15
50
20
95
Max.
Max.
Max.
112
1.5
STD30NF06
58
28
Unit
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
A
A
V
A
C
3/10