STW30NF20 STMicroelectronics, STW30NF20 Datasheet - Page 3

• Manufacturer Part Number: STW30NF20
• Description: MOSFET N-CH 200V 30A TO-247
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STW30NF20

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 75 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1597pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 15A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 65mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.075 Ohms
• Forward Transconductance Gfs (max / Min): 20 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5989-5

STP30NF20 - STW30NF20 - STB30NF20
1
Electrical ratings
Table 2.
1. Pulse width limited by safe operating area
2.
Table 3.
Table 4.
Symbol
Symbol
dv/dt
Symbol
I
I
P
R
DM
R
V
SD
V
T
E
T
I
I
TOT
T
I
thJC
GS
thJA
DS
stg
D
D
AR
AS
J
(1)
l
(2)
≤ 30A, di/dt ≤ 200A/µs, V
Absolute maximum ratings
Thermal data
Avalanche data
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Operating junction temperature
Storage temperature
Maximum lead temperature for soldering
purpose
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Avalanche current, repetitive or not
repetitive (pulse width limited by Tjmax)
Single pulse avalanche energy (starting
Tj=25°C, I
D
=I
AR
Parameter
Parameter
Parameter
DD
, V
= 80%V
DD
C
= 25°C
=50V)
GS
= 0)
(BR)DSS
C
C
=100°C
= 25°C
TO-220/
D²PAK
62.5
-55 to 150
Value
200
±20
120
125
300
30
19
10
Value
1
140
30
1
TO-247
50
Electrical ratings
W/°C
V/ns
Unit
°C/W
°C/W
Unit
°C
°C
Unit
W
V
V
A
A
A
mJ
A
3/16