IXTA80N10T7 IXYS, IXTA80N10T7 Datasheet - Page 5

MOSFET N-CH 100V 80A TO-263-7

IXTA80N10T7

Manufacturer Part Number
IXTA80N10T7
Description
MOSFET N-CH 100V 80A TO-263-7
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet

Specifications of IXTA80N10T7

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
14 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
3040pF @ 25V
Power - Max
230W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (6 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.014 Ohms
Drain-source Breakdown Voltage
100 V
Continuous Drain Current
80 A
Power Dissipation
230 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
80
Rds(on), Max, Tj=25°c, (?)
0.0140
Ciss, Typ, (pf)
3040
Qg, Typ, (nc)
60
Trr, Typ, (ns)
100
Trr, Max, (ns)
-
Pd, (w)
230
Rthjc, Max, (k/w)
0.65
Package Style
TO-263 (7-lead)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2006 IXYS CORPORATION All rights reserved
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240
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120
100
50
49
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40
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38
70
65
60
55
50
45
40
35
80
60
40
20
0
10
25
15
I
D
Switching Times vs. Gate Resistance
12
= 10A
t
T
V
Switching Times v s. Drain Current
35
r
J
DS
20
= 125ºC, V
Rise Time vs. Junction Temperature
= 50V
14
Fig. 17. Resistiv e Turn-off
45
Fig. 15. Resistiv e Turn-on
25
Fig. 13. Resistive Turn-on
t
d(on)
16
I
GS
D
55
T
I
D
= 30A
J
- - - -
30
R
= 10V
- Degrees Centigrade
18
- Amperes
G
- Ohms
65
20
35
t
R
V
75
f
G
DS
I
22
D
= 15 Ω , V
40
= 50V
= 30A
85
24
T
I
T
D
t
J
d(off)
J
45
= 125ºC
= 10A
= 25ºC
GS
26
95
- - - -
= 10V
R
V
V
50
G
GS
DS
28
105
= 15 Ω
= 50V
= 10V
30
55
115
78
74
70
66
62
58
54
50
46
42
38
34
30
95
90
85
80
75
70
65
60
55
50
45
40
35
30
125
160
150
140
130
120
110
100
49
48
47
46
45
44
43
42
41
40
39
90
80
70
60
50
40
70
65
60
55
50
45
40
35
25
15
10
Switching Times vs. Junction Temperature
Switching Times v s. Gate Resistance
t
R
V
t
T
V
35
f
G
DS
f
R
V
V
J
DS
20
12
I
G
GS
DS
= 125ºC, V
=15 Ω , V
D
= 50V
= 50V
= 15 Ω
= 30A
= 10V
= 50V
45
Fig. 18. Resistive Turn-off
I
Fig. 16. Resistive Turn-off
D
14
t
T
25
d(off)
= 10A
Rise Time vs. Drain Current
J
t
GS
d(off)
Fig. 14. Resistive Turn-on
- Degrees Centigrade
55
I
GS
- - - -
D
= 10V
16
= 30A
- - - -
30
R
= 10V
65
G
I
- Ohms
D
18
- Amperes
35
75
20
85
40
I
D
IXYS REF: T_80N10T (3V) 6-21-06.xls
IXTA80N10T7
22
= 10A
95
T
T
45
J
J
= 25ºC
= 125ºC
105
24
50
115
26
55
125
28
270
250
230
210
190
170
150
130
110
90
70
50
30
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40
36
30

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