IRF7704GTRPBF International Rectifier, IRF7704GTRPBF Datasheet

IRF7704GTRPBF

Manufacturer Part Number

IRF7704GTRPBF

Description

MOSFET P-CH 40V 4.6A 8-TSSOP

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF7704GTRPBF.pdf (9 pages)

Specifications of IRF7704GTRPBF

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

46 mOhm @ 4.6A, 10V

Drain To Source Voltage (vdss)

40V

Current - Continuous Drain (id) @ 25° C

4.6A

Vgs(th) (max) @ Id

3V @ 250µA

Gate Charge (qg) @ Vgs

38nC @ 4.5V

Input Capacitance (ciss) @ Vds

3150pF @ 25V

Power - Max

1.5W

Mounting Type

Surface Mount

Package / Case

8-TSSOP

Transistor Polarity

P Channel

Continuous Drain Current Id

-4.6A

Drain Source Voltage Vds

-40V

On Resistance Rds(on)

46mohm

Rds(on) Test Voltage Vgs

-10V

Rohs Compliant

Yes

Resistance Drain-source Rds (on)

74 mOhms

Drain-source Breakdown Voltage

- 40 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

- 4.6 A

Power Dissipation

1.5 W

Mounting Style

SMD/SMT

Gate Charge Qg

25 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRF7704GTRPBFTR

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HEXFET

utilize advanced processing techniques to achieve ex-

tremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design, that Inter-

national Rectifier is well known for,

with an extremely efficient and reliable device for

battery and load management.

The TSSOP-8 package has 45% less footprint area than

the standard SO-8. This makes the TSSOP-8 an ideal

device for applications where printed circuit board space

is at a premium. The low profile (<1.2mm) allows it to fit

easily into extremely thin environments such as portable

electronics and PCMCIA cards.

Thermal Resistance

Description

www.irf.com

θJA

@ T

P-Channel MOSFET

Ultra Low On-Resistance

Very Small SOIC Package

Low Profile (< 1.1mm)

Available in Tape & Reel

Lead-Free

Halogen-Free

STG

= 70°C

= 25°C

= 70°C

Power MOSFETs from International Rectifier

Maximum Junction-to-Ambient

Drain- Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Junction and Storage Temperature Range

Parameter

provides thedesigner

@ -10V

!Ã2ÃT

"Ã2ÃT

-40V

Ã2Ã9

Ã2ÃB

DSS

IRF7704GPbF

HEXFET Power MOSFET

'Ã2Ã9

&Ã2ÃT

$Ã2Ã9

%Ã2ÃT

DS(on)

-55 to + 150

74@V

46@V

Max.

-4.6

-3.7

± 20

-40

-19

1.5

1.0

max (mW)

= -4.5V

= -10V

TSSOP-8

-4.6A

-3.7A

04/23/08

mW/°C

Units

°C/W

°C

Related parts for IRF7704GTRPBF

IRF7704GTRPBF Summary of contents

Page 1

... Halogen-Free l Description ® HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that Inter- provides thedesigner national Rectifier is well known for, with an extremely efficient and reliable device for battery and load management ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP -15V -10V -4.5V -3.7V -3.5V 100 -3.3V -3.0V BOTTOM -2. 0.1 -2.70V 20µs PULSE WIDTH 0.01 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics ...

Page 4

0V MHZ C iss = rss = C gd 4000 C oss = Ciss 3000 2000 1000 Coss Crss ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) ...

Page 6

-4.6A 0.02 0.0 4.0 8.0 -V GS, Gate -to -Source Voltage (V) Fig 11. Typical On-Resistance Vs. Gate Voltage Charge Fig 13a. Basic Gate Charge Waveform ...

Page 7

Temperature ( °C ) Fig 14. Threshold Voltage Vs. Tempera- ture www.irf.com -250µ 0.001 75 100 125 150 0.010 ...

Page 8

DI9@Y 6SF $ r 7 "Y ppp r 'YÃi 8 iii hhh 8 'ÃTVSA G@69Ã6TTDB BG@ ! & T ...

Page 9

EXAMPLE: THIS IS AN IRF7704GPbF @Y HQG@) UCDTÃDTÃ IÃDSA&&! 9 U@Ã8P9@Ã`XX TSSOP-8 Tape and Reel Information A@@9Ã9DS@8UDPI 'Ã€€ IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com Q SUÃIVH7@S F7704G GPUÃ8P9@ ;;;;; QÃ‚ƒ‡v‚hyÃ2ÃÅGrhqA…rrÅ ...

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