IRF7704GTRPBF International Rectifier, IRF7704GTRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7704GTRPBF
• Description: MOSFET P-CH 40V 4.6A 8-TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7704GTRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 46 mOhm @ 4.6A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 4.6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3150pF @ 25V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -4.6A
• Drain Source Voltage Vds: -40V
• On Resistance Rds(on): 46mohm
• Rds(on) Test Voltage Vgs: -10V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 74 mOhms
• Drain-source Breakdown Voltage: - 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 4.6 A
• Power Dissipation: 1.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 25 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7704GTRPBFTR

5000
4000
3000
2000
1000
100
4
0.1
10
1
0
0.4
Fig 7. Typical Source-Drain Diode
1
T = 150 C
Fig 5. Typical Capacitance Vs.
J
-V
Coss
Crss
Ciss
SD
-V DS , Drain-to-Source Voltage (V)
Drain-to-Source Voltage
0.6
,Source-to-Drain Voltage (V)
°
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
0.8
T = 25 C
10
J
f = 1 MHZ
°
1.0
V
GS
SHORTED
= 0 V
1.2
100
100
0.1
10
1
Fig 8. Maximum Safe Operating Area
12
10
0.1
8
6
4
2
0
Tc = 25°C
Tj = 150°C
Single Pulse
0
I =
D
Fig 6. Typical Gate Charge Vs.
-V DS , Drain-toSource Voltage (V)
-4.6A
10
Gate-to-Source Voltage
Q , Total Gate Charge (nC)
1
G
OPERATION IN THIS AREA
LIMITED BY R DS (on)
20
10
30
V
V
DS
DS
=-32V
=-20V
40
100µsec
1msec
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10msec
100
50
1000
60