IRF7704GTRPBF International Rectifier, IRF7704GTRPBF Datasheet - Page 9

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IRF7704GTRPBF

Manufacturer Part Number
IRF7704GTRPBF
Description
MOSFET P-CH 40V 4.6A 8-TSSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7704GTRPBF

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
46 mOhm @ 4.6A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
4.6A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 4.5V
Input Capacitance (ciss) @ Vds
3150pF @ 25V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Transistor Polarity
P Channel
Continuous Drain Current Id
-4.6A
Drain Source Voltage Vds
-40V
On Resistance Rds(on)
46mohm
Rds(on) Test Voltage Vgs
-10V
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
74 mOhms
Drain-source Breakdown Voltage
- 40 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 4.6 A
Power Dissipation
1.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
25 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
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Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/2008
www.irf.com
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