IRF7704GTRPBF International Rectifier, IRF7704GTRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7704GTRPBF
• Description: MOSFET P-CH 40V 4.6A 8-TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7704GTRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 46 mOhm @ 4.6A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 4.6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3150pF @ 25V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -4.6A
• Drain Source Voltage Vds: -40V
• On Resistance Rds(on): 46mohm
• Rds(on) Test Voltage Vgs: -10V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 74 mOhms
• Drain-source Breakdown Voltage: - 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 4.6 A
• Power Dissipation: 1.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 25 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7704GTRPBFTR

Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:

‚
I
I
V
t
Q
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
R
I
S
SM
d(on)
r
d(off)
f
rr
DSS
fs
(BR)DSS
GS(th)
SD
iss
oss
rss
g
gs
gd
rr
DS(on)
(BR)DSS
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤
2
max. junction temperature.
/∆T
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
J
= 25°C (unless otherwise specified)
ƒ
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 3150 –––
–––
–––
–––
–––
–––
–––
-40
7.2
Surface mounted on 1 in square Cu board
0.03
–––
–––
–––
–––
–––
–––
–––
–––
360
190
100
250
200
–––
––– -100
9.5
25
10
25
29
41
-1.2
–––
–––
-3.0
–––
100
–––
–––
–––
–––
–––
–––
-10
-25
38
15
14
46
74
44
62
1.5
19
V/°C
mΩ
nC
nC
pF
ns
V
V
V
S
MOSFET symbol
integral reverse
p-n junction diode.
T
di/dt = -100A/µs ‚
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0kHz
showing the
T
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
G
= -4.6A
= -1.0A
= 25°C, I
= 25°C, I
= 6.0Ω
= V
= -15V
= -25V
= 0V, I
= -10V, I
= -4.5V, I
= -10V, I
= -32V, V
= -32V, V
= -20V ‚
= 0V
= -20V
= 20V
= -4.5V
= -4.5V
GS
Conditions
, I
D
S
F
D
Conditions
= -250µA
D
D
= -1.5A, V
= -1.5A
D
GS
GS
= -250µA
= -4.6A
= -4.6A ‚
= -3.7A ‚
= 0V, T
= 0V
D
www.irf.com
= -1mA
GS
J
= 70°C
G
= 0V ‚
D
S