STB13NM50N STMicroelectronics, STB13NM50N Datasheet - Page 5

• Manufacturer Part Number: STB13NM50N
• Description: MOSFET N-CH 500V 12A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB13NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 320 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 960pF @ 50V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7932-2; STB13NM50N

STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2.
Symbol
Symbol
I
SDM
V
t
t
I
I
d(on)
d(off)
Pulsed: pulse duration = 300µs, duty cycle 1.5%
RRM
RRM
I
SD
Q
Q
t
SD
t
t
t
r
f
rr
rr
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
I
I
di/dt = 100 A/µs
(see Figure 20)
I
di/dt=100 A/µs,Tj=125 °C
(see Figure 20)
V
R
(see Figure 18)
SD
SD
SD
DD
G
=12 A, V
=12 A, V
=12 A,V
=4.7 Ω, V
=250 V, I
Test conditions
Test conditions
DD
GS
DD
D
GS
=100 V
=0
=100 V
=6 A,
=10 V
Electrical characteristics
Min.
Min
Typ.
Typ.
300
370
22
22
30
15
40
10
3
4
Max. Unit
Max
1.3
12
48
Unit
µC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
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