STB13NM50N STMicroelectronics, STB13NM50N Datasheet - Page 8

• Manufacturer Part Number: STB13NM50N
• Description: MOSFET N-CH 500V 12A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB13NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 320 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 960pF @ 50V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7932-2; STB13NM50N

Electrical characteristics
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Figure 14. Normalized gate threshold voltage
Figure 16. Source-drain diode forward
vs temperature
characteristics
STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N
Figure 15. Normalized on resistance vs
Figure 17. Normalized BVdss vs temperature
temperature