BSP317PE6327 Infineon Technologies, BSP317PE6327 Datasheet - Page 2

• Manufacturer Part Number: BSP317PE6327
• Description: MOSFET P-CH 250V 430MA SOT223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP317PE6327

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 Ohm @ 430mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 430mA
• Vgs(th) (max) @ Id: 2V @ 370µA
• Gate Charge (qg) @ Vgs: 15.1nC @ 10V
• Input Capacitance (ciss) @ Vds: 262pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSP317PE6327INTR

1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev.2.0
Electrical Characteristics, at T
Parameter
Static Characteristics
Drain-source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-source on-state resistance
V
Drain-source on-state resistance
V
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
(Pin 4)
SMD version, device on PCB:
@ min. footprint
@ 6 cm
D
GS
DS
DS
GS
GS
GS
=-370µA
=-250V, V
=-250V, V
=0, I
=-20V, V
=-4.5V, I
=-10V, I
2
D
cooling area
=-250µA
D
D
DS
=-0.43A
GS
GS
=-0.39A
=0
=0, T
=0, T
j
j
1)
=25°C
=150°C
GS
= V
j
DS
= 25 °C, unless otherwise specified
Page 2
Symbol
V
V
I
I
R
R
Symbol
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
DS(on)
thJS
thJA
min.
-250
min.
-1
-
-
-
-
-
-
-
-
Values
Values
-0.1
typ.
-1.5
-10
typ.
-10
3.3
15
80
48
3
-
max.
max.
-100
-100
-0.2
115
70
BSP317P
25
-2
2008-03-27
5
4
-
Unit
V
µA
nA
Ω
Unit
K/W