MTD2955VT4 ON Semiconductor, MTD2955VT4 Datasheet - Page 2

• Manufacturer Part Number: MTD2955VT4
• Description: MOSFET P-CH 60V 12A DPAK
• Manufacturer: ON Semiconductor

Specifications of MTD2955VT4

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 230 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 770pF @ 25V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MTD2955VT4OS

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
5. Reflects typical values.
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 4)
SOURCE−DRAIN DIODE CHARACTERISTICS
INTERNAL PACKAGE INDUCTANCE
ELECTRICAL CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−Body Leakage Current (V
Gate Threshold Voltage
Static Drain−to−Source On−Resistance
Drain−to−Source On−Voltage
Forward Transconductance (V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
Forward On−Voltage (Note 3)
Reverse Recovery Time
Reverse Recovery Stored
Internal Drain Inductance
Internal Source Inductance
(V
Temperature Coefficient (Positive)
(V
(V
(V
Threshold Temperature Coefficient (Negative)
(V
(V
(V
Charge
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
(Measured from the source lead 0.25″ from package to source bond pad)
GS
DS
DS
DS
GS
GS
GS
= 0 Vdc, I
= 60 Vdc, V
= 60 Vdc, V
= V
= 10 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
GS
, I
D
D
= 250 mAdc)
D
D
D
= 0.25 mAdc)
GS
GS
= 6.0 Adc)
= 12 Adc)
= 6.0 Adc, T
= 0 Vdc)
= 0 Vdc, T
C
pk
=
Characteristic
DS
GS
J
J
= 10 Vdc, I
Max limit − Typ
= 150°C)
= 150°C)
= ± 20 Vdc, V
(I
3 x SIGMA
S
= 12 Adc, V
(T
(V
(V
(V
(I
(I
J
DS
S
S
DD
DS
D
= 25°C unless otherwise noted)
= 12 Adc, V
= 12 Adc, V
= 6.0 Adc)
= 25 Vdc, V
dI
= 30 Vdc, I
= 48 Vdc, I
DS
V
V
S
f = 1.0 MHz)
R
/dt = 100 A/ms)
GS
GS
GS
G
= 0 Vdc)
= 10 Vdc)
= 10 Vdc,
= 9.1 W)
= 0 Vdc, T
(Cpk ≥ 2.0) (Note 5)
(Cpk ≥ 2.0) (Note 5)
(Cpk ≥ 1.5) (Note 5)
http://onsemi.com
GS
GS
D
D
GS
= 12 Adc,
= 12 Adc,
= 0 Vdc)
= 0 Vdc,
= 0 Vdc,
J
= 150°C)
2
V
Symbol
R
V
V
(BR)DSS
t
t
I
I
C
Q
DS(on)
DS(on)
C
V
GS(th)
C
g
d(on)
d(off)
DSS
GSS
Q
Q
Q
Q
L
L
t
t
t
FS
oss
t
t
SD
rss
RR
iss
rr
a
b
D
r
f
S
T
1
2
3
Min
2.0
3.0
60
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.185
0.53
Typ
550
200
115
2.8
5.0
5.0
4.0
9.0
7.0
1.8
1.5
3.5
4.5
7.5
58
50
15
50
24
39
19
90
25
−
−
−
−
−
−
0.230
Max
100
100
770
280
100
100
4.0
2.9
2.5
3.0
10
30
50
80
30
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
mV/°C
mV/°C
mhos
mAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
nC
mC
nH
nH
pF
ns
ns
W