MTD2955VT4 ON Semiconductor, MTD2955VT4 Datasheet - Page 5

• Manufacturer Part Number: MTD2955VT4
• Description: MOSFET P-CH 60V 12A DPAK
• Manufacturer: ON Semiconductor

Specifications of MTD2955VT4

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 230 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 770pF @ 25V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MTD2955VT4OS

the maximum simultaneous drain−to−source voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (T
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed
Resistance−General Data and Its Use.”
traverse any load line provided neither rated peak current
(I
transition time (t
power averaged over a complete switching cycle must not
exceed (T
in switching circuits with unclamped inductive loads. For
DM
The Forward Biased Safe Operating Area curves define
Switching between the off−state and the on−state may
A Power MOSFET designated E−FET can be safely used
10
9
8
7
6
5
4
3
2
1
0
) nor rated voltage (V
Figure 8. Gate−To−Source and Drain−To−Source
0
J(MAX)
2
Q1
Q3
in
4
r
Voltage versus Total Charge
,t
− T
f
) do not exceed 10 ms. In addition the total
C
6
AN569,
)/(R
Q
T
, TOTAL CHARGE (nC)
qJC
8
Q2
).
DSS
10
QT
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
) is exceeded and the
“Transient
12
12
10
11
9
8
7
6
5
4
3
2
1
0
0.5
Figure 10. Diode Forward Voltage versus Current
V
T
14
GS
J
= 25°C
V
V
= 0 V
GS
0.7
DS
16
SAFE OPERATING AREA
V
C
SD
) of 25°C.
I
T
D
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
J
Thermal
= 12 A
= 25°C
18
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0.9
20
30
27
24
21
18
15
12
9
6
3
0
1.1
5
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases non−linearly with an
increase of peak current in avalanche and peak junction
temperature.
drain−to−source avalanche at currents up to rated pulsed
current (I
continuous current (I
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 12). Maximum
energy at currents below rated continuous I
assumed to equal the values indicated.
1000
100
Although many E−FETs can withstand the stress of
1.3
10
1
1
V
I
V
T
D
DD
GS
J
= 12 A
= 25°C
1.5
DM
= 30 V
= 10 V
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
), the energy rating is specified at rated
1.7
t
R
t
d(on)
d(off)
G
t
, GATE RESISTANCE (OHMS)
t
r
f
D
1.9
), in accordance with industry
10
D
can safely be
100