MTD2955VT4 ON Semiconductor, MTD2955VT4 Datasheet - Page 8

• Manufacturer Part Number: MTD2955VT4
• Description: MOSFET P-CH 60V 12A DPAK
• Manufacturer: ON Semiconductor

Specifications of MTD2955VT4

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 230 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 770pF @ 25V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MTD2955VT4OS

V
S
F
1
B
R
G
4
2
3
L
A
K
D
2 PL
0.13 (0.005)
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
H
J
M
C
0.228
5.80
T
−T−
E
PACKAGE DIMENSIONS
SOLDERING FOOTPRINT*
SEATING
PLANE
U
0.244
http://onsemi.com
0.101
6.20
2.58
CASE 369C−01
ISSUE O
DPAK−3
8
0.118
3.0
0.063
1.6
SCALE 3:1
Z
6.172
0.243
inches
mm
NOTES:
1. DIMENSIONING AND TOLERANCING
2. CONTROLLING DIMENSION: INCH.
STYLE 2:
DIM
PER ANSI Y14.5M, 1982.
PIN 1. GATE
A
B
C
D
E
G
H
K
R
S
U
V
F
J
L
Z
2. DRAIN
3. SOURCE
4. DRAIN
0.235
0.250
0.086
0.027
0.018
0.037
0.034
0.018
0.102
0.180
0.025
0.020
0.035
0.155
MIN
0.180 BSC
0.090 BSC
INCHES
0.245
0.265
0.094
0.035
0.023
0.045
0.040
0.023
0.215
0.040
0.050
0.114
MAX
−−−
−−−
MILLIMETERS
5.97
6.35
2.19
0.69
0.46
0.94
0.87
0.46
2.60
4.57
0.63
0.51
0.89
3.93
MIN
4.58 BSC
2.29 BSC
MAX
6.22
6.73
2.38
0.88
0.58
1.14
1.01
0.58
2.89
5.45
1.01
1.27
−−−
−−−