MTD2955VT4 ON Semiconductor, MTD2955VT4 Datasheet - Page 6
![MOSFET P-CH 60V 12A DPAK](/photos/5/30/53089/dpak_369c_sml.jpg)
MTD2955VT4
Manufacturer Part Number
MTD2955VT4
Description
MOSFET P-CH 60V 12A DPAK
Manufacturer
ON Semiconductor
Datasheet
1.MTD2955VT4.pdf
(9 pages)
Specifications of MTD2955VT4
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
230 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
770pF @ 25V
Power - Max
60W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
MTD2955VT4OS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MTD2955VT4
Manufacturer:
ONSEMI
Quantity:
905
100
1.0
0.1
10
0.1
0.01
V
SINGLE PULSE
T
1.0
0.1
C
Figure 11. Maximum Rated Forward Biased
GS
1.0E−05
= 25°C
= 15 V
D = 0.5
0.2
0.1
0.05
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
SINGLE PULSE
Safe Operating Area
1.0
0.01
0.02
R
THERMAL LIMIT
PACKAGE LIMIT
1.0E−04
DS(on)
100 ms
LIMIT
1 ms
Figure 14. Diode Reverse Recovery Waveform
10 ms
10
I
S
dc
1.0E−03
SAFE OPERATING AREA
Figure 13. Thermal Response
t
p
http://onsemi.com
100
di/dt
t
a
t, TIME (s)
6
1.0E−02
t
rr
t
b
I
225
200
175
150
125
100
S
75
50
25
0
P
0.25 I
(pk)
25
Figure 12. Maximum Avalanche Energy versus
DUTY CYCLE, D = t
S
t
1
50
T
t
2
J
, STARTING JUNCTION TEMPERATURE (°C)
Starting Junction Temperature
1.0E−01
TIME
75
1
/t
2
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
100
J(pk)
qJC
(t) = r(t) R
− T
1.0E+00
C
= P
125
(pk)
qJC
1
R
qJC
(t)
150
I
D
= 12 A
1.0E+01
175