BAP70AM,115 NXP Semiconductors, BAP70AM,115 Datasheet - Page 2

DIODE PIN 50V 100MA 6-UMT

BAP70AM,115

Manufacturer Part Number
BAP70AM,115
Description
DIODE PIN 50V 100MA 6-UMT
Manufacturer
NXP Semiconductors
Type
Attenuatorr
Datasheet

Specifications of BAP70AM,115

Package / Case
SC-70-6, SC-88, SOT-363
Diode Type
PIN - 2 Pair Series
Voltage - Peak Reverse (max)
50V
Current - Max
100mA
Capacitance @ Vr, F
0.25pF @ 20V, 1MHz
Resistance @ If, F
1.9 Ohm @ 100mA, 100MHz
Power Dissipation (max)
300mW
Configuration
Double Dual Series
Reverse Voltage
50 V
Forward Continuous Current
100 mA
Carrier Life
1.25 us
Forward Voltage Drop
1.1 V @ 50 mA
Maximum Diode Capacitance
0.25 pF @ 20 V
Maximum Operating Temperature
+ 150 C
Maximum Series Resistance @ Maximum If
1.9 Ohm @ 100 mA
Maximum Series Resistance @ Minimum If
100 Ohm @ 0.5 mA
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
300 mW
Forward Current
100mA
Forward Voltage
1.1V
Operating Temperature Classification
Military
Mounting
Surface Mount
Typical Carrier Life Time
1.25us
Operating Temperature (max)
150C
Operating Temperature (min)
-65C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934059306115
BAP70AM T/R
BAP70AM T/R
NXP Semiconductors
4. Marking
5. Limiting values
6. Thermal characteristics
BAP70AM
Product data sheet
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Type number
BAP70AM
Symbol
V
I
P
T
T
Symbol
R
F
stg
j
R
tot
th(j-sp)
Marking
Limiting values
Thermal characteristics
Parameter
thermal resistance from junction
to solder point
Parameter
reverse voltage
forward current
total power dissipation
storage temperature
junction temperature
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 7 September 2010
Marking code
N9*
Conditions
T
sp
= 90 °C
Conditions
Description
* = - : made in Hong Kong
* = p : made in Hong Kong
* = t : made in Malaysia
Min
-
-
-
−65
−65
Silicon PIN diode array
BAP70AM
Max
50
100
300
+150
+150
Typ
260
© NXP B.V. 2010. All rights reserved.
Unit
V
mA
mW
°C
°C
Unit
K/W
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