BAP70AM,115 NXP Semiconductors, BAP70AM,115 Datasheet - Page 2

• Manufacturer Part Number: BAP70AM,115
• Description: DIODE PIN 50V 100MA 6-UMT
• Manufacturer: NXP Semiconductors
• Type: Attenuatorr

Specifications of BAP70AM,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Diode Type: PIN - 2 Pair Series
• Voltage - Peak Reverse (max): 50V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.25pF @ 20V, 1MHz
• Resistance @ If, F: 1.9 Ohm @ 100mA, 100MHz
• Power Dissipation (max): 300mW
• Configuration: Double Dual Series
• Reverse Voltage: 50 V
• Forward Continuous Current: 100 mA
• Carrier Life: 1.25 us
• Forward Voltage Drop: 1.1 V @ 50 mA
• Maximum Diode Capacitance: 0.25 pF @ 20 V
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 1.9 Ohm @ 100 mA
• Maximum Series Resistance @ Minimum If: 100 Ohm @ 0.5 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 300 mW
• Forward Current: 100mA
• Forward Voltage: 1.1V
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Typical Carrier Life Time: 1.25us
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934059306115; BAP70AM T/R; BAP70AM T/R

NXP Semiconductors
4. Marking
5. Limiting values
6. Thermal characteristics
BAP70AM
Product data sheet
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Type number
BAP70AM
Symbol
V
I
P
T
T
Symbol
R
F
stg
j
R
tot
th(j-sp)
Marking
Limiting values
Thermal characteristics
Parameter
thermal resistance from junction
to solder point
Parameter
reverse voltage
forward current
total power dissipation
storage temperature
junction temperature
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 7 September 2010
Marking code
N9*
Conditions
T
sp
= 90 °C
Conditions
Description
* = - : made in Hong Kong
* = p : made in Hong Kong
* = t : made in Malaysia
Min
-
-
-
−65
−65
Silicon PIN diode array
BAP70AM
Max
50
100
300
+150
+150
Typ
260
© NXP B.V. 2010. All rights reserved.
Unit
V
mA
mW
°C
°C
Unit
K/W
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