BCX70KT/R NXP Semiconductors, BCX70KT/R Datasheet - Page 2

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BCX70KT/R

Manufacturer Part Number
BCX70KT/R
Description
Trans GP BJT NPN 45V 0.1A 3-Pin TO-236AB T/R
Manufacturer
NXP Semiconductors
Type
NPNr
Datasheet

Specifications of BCX70KT/R

Package
3TO-236AB
Supplier Package
TO-236AB
Pin Count
3
Minimum Dc Current Gain
100@10uA@5V|380@2mA@5V|100@50mA@1V
Maximum Operating Frequency
250(Typ) MHz
Maximum Dc Collector Current
0.1 A
Maximum Base Emitter Saturation Voltage
0.85@0.25mA@10mA|1.05@1.25mA@50mA V
Maximum Collector Emitter Saturation Voltage
0.35@0.25mA@10mA|0.55@1.25mA@50mA V
Maximum Collector Emitter Voltage
45 V
Maximum Emitter Base Voltage
5 V
NXP Semiconductors
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complements: BCX71 series.
MARKING
Note
1. * = p : Made in Hong Kong.
ORDERING INFORMATION
2004 Jan 16
BCX70G
BCX70H
BCX70J
BCX70K
BCX70G
BCX70H
BCX70J
BCX70K
NPN general purpose transistors
NUMBER
* = t : Made in Malaysia.
* = W : Made in China.
TYPE
TYPE NUMBER
NAME
MARKING CODE
plastic surface mounted package; 3 leads
AG*
AH*
AK*
AJ*
(1)
2
DESCRIPTION
PINNING
handbook, halfpage
PACKAGE
PIN
1
2
3
Fig.1 Simplified outline (SOT23) and symbol.
Top view
base
emitter
collector
1
3
DESCRIPTION
2
BCX70 series
MAM255
Product data sheet
1
VERSION
SOT23
3
2

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