BF998,215 NXP Semiconductors, BF998,215 Datasheet - Page 6
![MOSFET NCH DUAL GATE 12V SOT143B](/photos/5/30/53004/568-sot-143b_sml.jpg)
BF998,215
Manufacturer Part Number
BF998,215
Description
MOSFET NCH DUAL GATE 12V SOT143B
Manufacturer
NXP Semiconductors
Datasheet
1.BF998215.pdf
(15 pages)
Specifications of BF998,215
Package / Case
SOT-143, SOT-143B, TO-253AA
Transistor Type
N-Channel Dual Gate
Frequency
200MHz
Voltage - Rated
12V
Current Rating
30mA
Noise Figure
0.6dB
Current - Test
10mA
Voltage - Test
8V
Configuration
Single Dual Gate
Continuous Drain Current
0.03 A
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 6 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
200 mW
Transistor Polarity
N-Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1973-2
934002640215
BF998 T/R
934002640215
BF998 T/R
NXP Semiconductors
1996 Aug 01
handbook, halfpage
handbook, halfpage
Silicon N-channel dual-gate MOS-FETs
Fig.9
V
V
Fig.11 Gate 1 input capacitance as a function of
DS
DS
(mS)
|y fs |
= 8 V; T
(pF)
= 8 V; V
C is
2.3
2.1
1.9
1.7
1.5
1.3
30
24
18
12
6
0
−2.4
−1
Forward transfer admittance as a function of
gate 1 voltage; typical values.
gate 1-source voltage; typical values.
amb
G2-S
= 25 C.
= 4 V; f = 1 MHz; T
−1.6
−0.8
0
amb
= 25 C.
V G1 (V)
V G2-S = 4 V
0
V G1-S (V)
MGE812
MGE809
3 V
2 V
1 V
0 V
0.8
1
6
handbook, halfpage
handbook, halfpage
V
V
Fig.12 Gate 1 input capacitance as a function of
G2-S
DS
C os
(pF)
(pF)
Fig.10 Output capacitance as a function of
= 8 V; V
C is
= 4 V; f = 1 MHz; T
2.4
2.3
2.2
2.1
2.0
1.5
1.4
1.3
1.2
1.1
1.0
4
6
gate 2-source voltage; typical values.
G1-S
drain-source voltage; typical values.
= 0 V; f = 1 MHz; T
6
4
amb
= 25 C.
8
2
amb
BF998; BF998R
10
= 25 C.
Product specification
V DS (V)
0
V G2−S (V)
12
12 mA
10 mA
8 mA
MBH479
MGE810
−2
14