BF992,215 NXP Semiconductors, BF992,215 Datasheet
BF992,215
Specifications of BF992,215
933615000215
BF992 T/R
Related parts for BF992,215
BF992,215 Summary of contents
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... IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. ...
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... NXP Semiconductors Silicon N-channel dual gate MOS-FET APPLICATIONS VHF applications such as VHF television tuners and FM tuners with 12 V supply voltage. The device is also suitable for use in professional communications equipment. DESCRIPTION Depletion type field-effect transistor in a plastic micro-miniature SOT143B package with source and substrate interconnected ...
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... NXP Semiconductors Silicon N-channel dual gate MOS-FET LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V drain-source voltage DS I drain current D I gate 1 current G1 I gate 2 current G2 P total power dissipation tot T storage temperature stg T operating junction temperature ...
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... NXP Semiconductors Silicon N-channel dual gate MOS-FET THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to ambient in free air th j-a Note 1. Device mounted on a ceramic substrate STATIC CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER V gate 1-source breakdown voltage (BR)G1-SS V gate 2-source breakdown voltage ...
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... NXP Semiconductors Silicon N-channel dual gate MOS-FET 24 handbook, halfpage I D (mA G2-S j Fig.3 Output characteristics; typical values. 30 handbook, halfpage | (mS G2 Fig.5 Forward transfer admittance as a function of drain current; typical values. MGE797 handbook, halfpage G1-S = 0.2 V (mA) 0 0.1 V 0.2 V 0.3 V 0.4 V 0.5 V 0.6 V ...
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... NXP Semiconductors Silicon N-channel dual gate MOS-FET 2 10 handbook, halfpage y is (mS mA G2-S D Fig.7 Input admittance as a function of frequency; typical values. 25 handbook, halfpage Y fs (mS mA G2-S D Fig.9 Forward transfer admittance as a function of frequency; typical values. MGE794 handbook, halfpage (MHz amb Fig.8 ...
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... NXP Semiconductors Silicon N-channel dual gate MOS-FET PACKAGE OUTLINE Plastic surface mounted package; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.48 0.88 0.1 mm 0.9 0.38 0.78 OUTLINE VERSION IEC SOT143B scale 0.15 3.0 1.4 1.9 1.7 0.09 2.8 1.2 ...
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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors Revision history Revision history Document ID Release date BF992_N_4 20071121 • Modifications: Fig page 2; Figure note changed BF992_3 19990811 (9397 750 06013) BF992_2 19960730 BF992_SF_1 - Silicon N-channel dual gate MOS-FET Data sheet status Change notice Product data sheet - Product specification - Product specifi ...