BF862,215 NXP Semiconductors, BF862,215 Datasheet - Page 5

• Manufacturer Part Number: BF862,215
• Description: JFET N-CHAN 20V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BF862,215

• Package / Case: SST3 (SOT-23-3)
• Transistor Type: N-Channel JFET
• Voltage - Rated: 20V
• Current Rating: 25mA
• Configuration: Single
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 20 V
• Gate-source Breakdown Voltage: - 20 V
• Continuous Drain Current: 40 mA
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: 20 V
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Frequency: -
• Gain: -
• Noise Figure: -
• Current - Test: -
• Voltage - Test: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1968-2; 934055519215; BF862 T/R

NXP Semiconductors
2000 Jan 05
handbook, halfpage
handbook, halfpage
N-channel junction FET
V
Fig.3
V
Fig.5
DS
DS
I DSS
(mS)
(mA)
y fs
= 8 V; T
= 8 V; T
60
50
40
30
20
40
30
20
10
0
0
0
Drain saturation current as a function of
Forward transfer admittance as a function
gate-source cut-off voltage; typical values.
of drain saturation current; typical values.
j
j
= 25 C.
= 25 C.
−0.5
10
20
−1
V GSoff (V)
I DSS (mA)
MCD811
MCD809
−1.5
30
5
handbook, halfpage
handbook, halfpage
V
Fig.4
V
Fig.6
DS
DS
(mS)
(μS)
g os
y fs
300
200
100
= 8 V; T
= 8 V; T
60
40
20
0
0
0
0
Common-source output conductance as a
function of drain saturation current;
typical values.
Forward transfer admittance as a function
of drain current; typical values.
j
j
= 25 C.
= 25 C.
10
10
20
20
Product specification
I DSS (mA)
I D (mA)
MCD810
MCD812
BF862
30
30