BF994S,215 NXP Semiconductors, BF994S,215 Datasheet - Page 4

• Manufacturer Part Number: BF994S,215
• Description: MOSFET NCH DUAL GATE 20V SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BF994S,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: N-Channel Dual Gate
• Frequency: 200MHz
• Gain: 25dB
• Voltage - Rated: 20V
• Current Rating: 30mA
• Noise Figure: 1dB
• Current - Test: 10mA
• Voltage - Test: 15V
• Configuration: Single Dual Gate
• Continuous Drain Current: 0.03 A
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW
• Transistor Polarity: N-Channel
• Application: VHF
• Channel Type: N
• Channel Mode: Depletion
• Drain Source Voltage (max): 20V
• Power Gain (typ)@vds: 25@15VdB
• Noise Figure (max): 1(Typ)dB
• Package Type: SOT
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.5@15V@Gate 1/1.2@15V@Gate 2pF
• Output Capacitance (typ)@vds: 1@15VpF
• Reverse Capacitance (typ): 0.025@15VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1972-2; 933754970215; BF994S T/R

NXP Semiconductors
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
Measuring conditions (common source): I
July 1993
I
I
V
V
I
V
V
C
C
C
C
F
G
j
G1-SS
G2-SS
DSS
Y
SYMBOL
SYMBOL
= 25 C unless otherwise specified.
(BR)G1-SS
(BR)G2-SS
(P)G1-S
(P)G2-S
N-channel dual-gate MOS-FET
ig1-s
ig2-s
rs
os
p
fs
gate 1 cut-off currents
gate 2 cut-off currents
gate 1-source breakdown voltage I
gate 2-source breakdown voltage I
drain-source cut-off voltage
gate 1-source cut-off voltage
gate 2-source cut-off voltage
transfer admittance
input capacitance at gate 1
input capacitance at gate 2
feedback capacitance
output capacitance
noise figure
power gain
PARAMETER
PARAMETER
D
= 10 mA; V
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 200 MHz; G
f = 200 MHz; G
G
L
= 0.5 mS; B
V
V
V
I
I
G1-SS
G2-SS
D
D
G1-S
G2-S
DS
= 20 A; V
= 20 A; V
DS
= 15 V; V
= 5 V; V
= 5 V; V
= 10 mA; V
= 10 mA; V
= 15 V; V
CONDITIONS
4
L
S
S
= B
= 2 mS; B
= 2 mS; B
DS
DS
G1-S
CONDITIONS
G2-S
G1-S
Lopt
= 15 V; V
= 15 V; V
G2-S
= 0; V
G2-S
G1-S
= V
= V
= 4 V; T
S
S
DS
DS
= V
= V
G2-S
= B
= B
G2-S
G1-S
= 0
= 0
DS
DS
Sopt
Sopt
= 4 V
amb
= 0
= 0
= 4 V
= 0
;
= 25 C.






15
MIN.


6
6
4


18
2.5
1.2
25
1
1
25
TYP.
MIN.
Product specification
50
50
20
20
20
2.5
2

3





MAX.
MAX.
BF994S
nA
nA
V
V
mA
V
V
mS
pF
pF
fF
pF
dB
dB
UNIT
UNIT