ATF-33143-BLKG Avago Technologies US Inc., ATF-33143-BLKG Datasheet - Page 3

• Manufacturer Part Number: ATF-33143-BLKG
• Description: IC PHEMT 1.9GHZ 80MA LN SOT-343
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-33143-BLKG

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Gain: 15dB
• Voltage - Rated: 5.5V
• Current Rating: 305mA
• Noise Figure: 0.5dB
• Current - Test: 80mA
• Voltage - Test: 4V
• Power - Output: 22dBm
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Power Dissipation: 600 mW
• Drain Source Voltage Vds: 5.5 V
• Gate-source Breakdown Voltage: - 5 V
• Continuous Drain Current: 305 mA
• Maximum Operating Temperature: + 160 C
• Maximum Drain Gate Voltage: - 5 V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 516-1862; ATF-33143-BLKG

ATF-33143 DC Electrical Specifications
Notes:
1. Guaranteed at wafer probe level.
2. Typical value determined from a sample size of 450 parts from 9 wafers.
3. Measurements obtained using production test board described in Figure 5.
Input
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements. This circuit represents a
trade-off between an optimal noise match and a realizable match based on production test requirements. Circuit losses have been de-embedded from
actual measurements.
3
Symbol
I
g
OIP3
V
I
P
dss
GDO
I
NF
G
P
m
gss
I
1dB
d
[1]
a
[1]
[1]
Line Including
Transmission
(0.5 dB loss)
Gate Bias T
50 Ohm
Parameters and Test Conditions
Saturated Drain Current
Pinchoff Voltage
Quiescent Bias Current
Transconductance
Gate to Drain Leakage Current
Gate Leakage Current
Noise Figure
Associated Gain
Output 3
Intercept Point
1 dB Compressed
Compressed Power
rd
Order
Matching Circuit
[3]
Γ_mag = 0.20
Γ_ang = 124°
[3]
(0.3 dB loss)
[3]
Input
T
A
5 dBm Pout/Tone
5 dBm Pout/Tone
= 25°C, RF parameters measured in a test circuit for a typical device
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 2 GHz
f = 2 GHz
f = 2 GHz
f = 2 GHz
DUT
V
DS
= 1.5 V, I
V
DS
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
V
= 1.5 V, g
GS
DS
= 4 V, I
= 4 V, I
= 4 V, I
= 4 V, I
= 4 V, I
= 4 V, I
= 4 V, I
= 4 V, I
= 4 V, I
= 4 V, I
= 4 V, I
= 4 V, I
= 4 V, I
= 4 V, I
= 4 V, I
= 4 V, I
= -0.5 V, V
= 1.5 V, V
Line Including
V
Transmission
(0.5 dB loss)
Drain Bias T
DS
GD
= 10% of I
50 Ohm
= V
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
m
V
= 80 mA
= 60 mA
= 80 mA
= 60 mA
= 80 mA
= 60 mA
= 80 mA
= 60 mA
= 80 mA
= 60 mA
= 80 mA
= 60 mA
= 80 mA
= 60 mA
= 80 mA
= 60 mA
= I
GS
GD
DS
GS
= -4 V
dss
= 0 V
= 4 V
= 5 V
/V
dss
P
Output
mmho 360
Units
dBm
dBm
dBm
dBm
mA
mA
µA
µA
dB
dB
dB
dB
V
-0.65
13.5
Min. Typ.
175
—
—
30
33.5
32.5
-0.5
237
440
0.5
0.5
0.4
0.4
80
42
15
15
21
21
32
31
22
21
21
20
[2]
-0.35
1000
16.5
Max.
305
600
0.8
—
—