ATF-33143-BLKG Avago Technologies US Inc., ATF-33143-BLKG Datasheet - Page 7
![IC PHEMT 1.9GHZ 80MA LN SOT-343](/photos/5/63/56361/sot-343_pkg_sml.jpg)
ATF-33143-BLKG
Manufacturer Part Number
ATF-33143-BLKG
Description
IC PHEMT 1.9GHZ 80MA LN SOT-343
Manufacturer
Avago Technologies US Inc.
Datasheet
1.ATF-33143-BLKG.pdf
(18 pages)
Specifications of ATF-33143-BLKG
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Transistor Type
pHEMT FET
Frequency
2GHz
Gain
15dB
Voltage - Rated
5.5V
Current Rating
305mA
Noise Figure
0.5dB
Current - Test
80mA
Voltage - Test
4V
Power - Output
22dBm
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Power Dissipation
600 mW
Drain Source Voltage Vds
5.5 V
Gate-source Breakdown Voltage
- 5 V
Continuous Drain Current
305 mA
Maximum Operating Temperature
+ 160 C
Maximum Drain Gate Voltage
- 5 V
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
516-1862
ATF-33143-BLKG
ATF-33143-BLKG
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ATF-33143-BLKG
Manufacturer:
AVAGO/安华高
Quantity:
20 000
Notes:
1. Measurements made on ATN LP1 power load pull system.
2. Quicescent drain current, I
3. PAE (%) = ((P
4. Gamma out is the reflection coefficient of the matching circuit presented to the output of the device.
ATF-33143 Power Parameters Tuned for Max P
7
Figure 20. Swept Power Tuned for Max P
V
-10
-20
DS
70
60
50
40
30
20
10
on frequency and dc bias point. At lower values of I
higher P
with active biasing.
(GHz)
0
=4V, I
Freq
0.9
1.5
1.8
2.0
4.0
6.0
-40
DSQ
-30
1dB
= 80 mA, 2 GHz.
and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done
out
-20
(dBm)
20.7
21.2
21.1
21.6
23.0
24.0
P
Gain
PAE
P
– P
out
P
1dB
in
in
(dBm)
-10
) / P
dc
) X 100
0
DSQ
(mA)
130
I
, is set with zero RF drive applied. As P
89
91
80
81
97
d
10
1dB
20
23.2
20.7
19.2
18.1
11.9
G
(dB)
5.9
1dB
DSQ
PAE
the device is running closer to class B as power output approaches P
1dB
(%)
33
36
40
44
48
36
1dB
,
V
DS
= 4 V, I
(dBm)
1dB
23.2
23.8
23.0
23.2
24.6
25.2
P
3dB
is approached, the drain current may increase or decrease depending
DSQ
= 80 mA
(mA)
102
116
135
136
I
94
89
d
PAE
(%)
51
51
52
57
48
36
3dB
Γ Out_mag
(Mag.)
0.39
0.43
0.43
0.42
0.40
0.37
1dB
Γ Out_ang
. This results in
-150
-124
160
165
170
174
(°)