BLF1046,112 NXP Semiconductors, BLF1046,112 Datasheet - Page 8

• Manufacturer Part Number: BLF1046,112
• Description: TRANSISTOR RF LDMOS SOT467C
• Manufacturer: NXP Semiconductors

Specifications of BLF1046,112

• Package / Case: SOT467C
• Transistor Type: LDMOS
• Frequency: 960MHz
• Gain: 14dB
• Voltage - Rated: 65V
• Current Rating: 4.5A
• Current - Test: 300mA
• Voltage - Test: 26V
• Power - Output: 45W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 0.3 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.5 A
• Maximum Operating Temperature: + 200 C
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 45W
• Power Gain (typ)@vds: 14(Min)@26VdB
• Frequency (max): 1GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 2S
• Drain Source Resistance (max): 300(Typ)@14Vmohm
• Input Capacitance (typ)@vds: 46@26VpF
• Output Capacitance (typ)@vds: 37@26VpF
• Reverse Capacitance (typ): 1.5@26VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 46(Min)%
• Mounting: Screw
• Mode Of Operation: 1-Tone Class-AB/2-Tone Class-AB/CW Class-AB
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-2384; 934055384112; BLF1046; BLF1046

Philips Semiconductors
2000 Dec 20
handbook, full pagewidth
handbook, full pagewidth
UHF power LDMOS transistor
50
input
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (
The other side is unetched and serves as a ground plane.
C9
C16
C13
C10
L3
input
Fig.16 Component layout for 800 to 1000 MHz class-AB broadband test circuit.
C1
C2
C16
Fig.15 Class-AB broadband test circuit at f = 800 to 1000 MHz.
L1
R4
F1
R1
L4
R3
C3
C4
L5
R2
39 mm
C1
C13
C9
L1
R4
C2
F1
I DQ adjustment
R5
C10
C3
C4
R1
R3
C11
L6
R2
G
TR
8
R5
D
L7
C11
L2
C14
L2
C12
C5
C6
C14
C15
C6
C5
C15
+ 26 V ground
C7
L8
V DS (26 V)
r
= 2.2), thickness 0.79 mm.
C8
MLD467
C7
output
Product specification
L9
C8
BLF1046
MLD466
output
50