BLF278,112 NXP Semiconductors, BLF278,112 Datasheet - Page 6

• Manufacturer Part Number: BLF278,112
• Description: TRANSISTOR RF DMOS SOT262A1
• Manufacturer: NXP Semiconductors

Specifications of BLF278,112

• Package / Case: SOT-262A1
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 108MHz
• Gain: 22dB
• Voltage - Rated: 125V
• Current Rating: 18A
• Current - Test: 100mA
• Voltage - Test: 50V
• Power - Output: 300W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.3 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 125 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 500000 mW
• Maximum Operating Temperature: + 200 C
• Application: VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 125V
• Power Gain (typ)@vds: 20(Min)@50V/18@50V/16@50VdB
• Frequency (max): 225MHz
• Package Type: CDFM
• Pin Count: 5
• Forward Transconductance (typ): 6.2S
• Drain Source Resistance (max): 300@10Vmohm
• Input Capacitance (typ)@vds: 480@50VpF
• Output Capacitance (typ)@vds: 190@50VpF
• Reverse Capacitance (typ): 14@50VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 80%
• Mounting: Screw
• Mode Of Operation: CW Class-AB/CW Class-B/CW Class-C
• Number Of Elements: 2
• Power Dissipation (max): 500000mW
• Vswr (max): 7
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2412; 933978520112; BLF278; BLF278

Philips Semiconductors
APPLICATION INFORMATION
Class-B operation
RF performance in CW operation in a common source push-pull test circuit. T
otherwise specified. R
Ruggedness in class-B operation
The BLF278 is capable of withstanding a load mismatch corresponding to VSWR = 7:1 through all phases under the
following conditions: V
2003 Sep 19
handbook, halfpage
CW, class-B
CW, class-C
VHF push-pull power MOS transistor
V
Fig.8
(pF)
C rs
GS
MODE OF OPERATION
400
300
200
100
= 0; f = 1 MHz.
0
0
Feedback capacitance as a function of
drain-source voltage; typical values per
section.
10
GS
DS
20
= 4
= 50 V; f = 108 MHz at rated load power.
per section; optimum load impedance per section = 3.2 + j4.3
30
(MHz)
108
108
40
f
V DS (V)
MGE620
50
V
(V)
50
50
DS
6
V
2
GS
I
(A)
DQ
0.1
= 0
300
300
(W)
P
h
L
= 25 C; R
th mb-h
typ. 22
typ. 18
(dB)
G
20
p
(V
= 0.15 K/W unless
Product Specification
DS
= 50 V).
BLF278
typ. 70
typ. 80
>60
(%)
D