PD85004 STMicroelectronics, PD85004 Datasheet - Page 14

• Manufacturer Part Number: PD85004
• Description: TRANS RF POWER LDMOST
• Manufacturer: STMicroelectronics

Specifications of PD85004

• Transistor Type: LDMOS
• Frequency: 870MHz
• Gain: 17dB
• Voltage - Rated: 40V
• Current Rating: 2A
• Current - Test: 50mA
• Voltage - Test: 13.6V
• Power - Output: 4W
• Package / Case: SOT-89
• Configuration: Single
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: - 0.5 V to 15 V
• Continuous Drain Current: 2 A
• Power Dissipation: 6000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Drain Source Voltage Vds: 40V
• Continuous Drain Current Id: 2A
• Power Dissipation Pd: 6W
• Operating Temperature Range: -65°C To +150°C
• Rf Transistor Case: SOT-89
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-8291

Package mechanical data
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Thermal pad and via design
Thernal vias are required in the PCB layout to effectively conduct heat away from the
package. The via pattern has been designed to address thermal, power dissipation and
electrical requirements of the device.
The via pattern is based on thru-hole vias with 0.203 mm to 0.330 mm finished hole size on
a 0.5 mm to 1.2 mm grid pattern with 0.025 plating on via walls. If micro vias are used in a
design, it is suggested that the quantity of vias be increased by a 4:1 ratio to achieve similar
results.
Figure 16. Pad layout details
PD85004