PD20010-E STMicroelectronics, PD20010-E Datasheet - Page 3

• Manufacturer Part Number: PD20010-E
• Description: TRANS RF N-CH FET POWERSO-10RF
• Manufacturer: STMicroelectronics

Specifications of PD20010-E

• Transistor Type: LDMOS
• Frequency: 2GHz
• Gain: 11dB
• Voltage - Rated: 40V
• Current Rating: 5A
• Current - Test: 150mA
• Voltage - Test: 13.6V
• Power - Output: 10W
• Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 5A
• Drain Source Voltage (max): 40V
• Output Power (max): 15W(Typ)
• Power Gain (typ)@vds: 11dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Formed lead)
• Pin Count: 4
• Input Capacitance (typ)@vds: 45@12.5VpF
• Output Capacitance (typ)@vds: 36@12.5VpF
• Reverse Capacitance (typ): 1.2@12.5VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 53%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 59000mW
• Vswr (max): 20(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

1
1.1
1.2
Electrical data
Maximum ratings
T
Table 2.
Thermal data
Table 3.
CASE
V
Symbol
Symbol
(BR)DSS
P
R
T
V
= 25 °C
DISS
T
STG
I
thJC
GS
D
J
Absolute maximum ratings
Thermal data
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation (@ T
Max. operating junction temperature
Storage temperature
Junction - case thermal resistance
Parameter
Parameter
C
= 70 °C)
-65 to +150
-0.5 to +15
Value
Value
165
1.6
40
59
5
°C/W
Unit
Unit
°C
°C
W
V
V
A
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