PD57006-E STMicroelectronics, PD57006-E Datasheet - Page 6
![IC TRANS RF PWR LDMOST PWRSO-10](/photos/5/64/56403/pd57006-e_sml.jpg)
PD57006-E
Manufacturer Part Number
PD57006-E
Description
IC TRANS RF PWR LDMOST PWRSO-10
Manufacturer
STMicroelectronics
Datasheet
1.PD57006-E.pdf
(22 pages)
Specifications of PD57006-E
Transistor Type
LDMOS
Frequency
945MHz
Gain
15dB
Voltage - Rated
65V
Current Rating
1A
Current - Test
70mA
Voltage - Test
28V
Power - Output
6W
Package / Case
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Configuration
Single
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1 A
Power Dissipation
20 W
Maximum Operating Temperature
+ 165 C
Forward Transconductance Gfs (max / Min)
0.58 S
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Continuous Drain Current Id
1A
Drain Source Voltage Vds
65V
Threshold Voltage Vgs Typ
5V
Transistor Case Style
PowerSO-10RF
No. Of Pins
3
Svhc
No SVHC (15-Dec-2010)
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-6719-5
PD57006-E
PD57006-E
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PD57006-E
Manufacturer:
ST
Quantity:
20 000
Typical performance
4
6/22
Figure 3.
Figure 5.
1.06
1.04
1.02
0.98
0.96
0.94
0.92
100
0.1
10
1
1
-25
0
f=1M H z
4
Typical performance
Capacitance vs supply voltage
Gate-source voltage vs
case temperature
0
Vds=10 V
8
Tc, CASE TEMPERATURE (°C)
VDD, DRAIN VOLTAGE (V)
25
12
16
50
20
Id=.05 A
C oss
C iss
75
C rss
24
Id=1.5 A
Doc ID 12611 Rev 3
Id=.2 A
Id=.6 A
Id=1 A
28
100
Figure 4.
Drain current vs
gate source voltage
PD57006-E