PD84010-E STMicroelectronics, PD84010-E Datasheet - Page 3
![TRANS RF POWER LDMOST N-CH](/photos/5/64/56405/pd84010-e_sml.jpg)
PD84010-E
Manufacturer Part Number
PD84010-E
Description
TRANS RF POWER LDMOST N-CH
Manufacturer
STMicroelectronics
Datasheet
1.PD84010-E.pdf
(14 pages)
Specifications of PD84010-E
Transistor Type
LDMOS
Frequency
870MHz
Gain
16.3dB
Voltage - Rated
40V
Current Rating
8A
Current - Test
300mA
Voltage - Test
7.5V
Power - Output
2W
Package / Case
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
8A
Drain Source Voltage (max)
40V
Output Power (max)
10W
Power Gain (typ)@vds
16.3dB
Frequency (max)
1GHz
Package Type
PowerSO-10RF (Formed lead)
Pin Count
4
Input Capacitance (typ)@vds
77@7VpF
Output Capacitance (typ)@vds
54@7VpF
Reverse Capacitance (typ)
2.3@7VpF
Operating Temp Range
-65C to 165C
Drain Efficiency (typ)
73%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
95000mW
Vswr (max)
20(Min)
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
497-8290
497-8290-5
497-8290
497-8290-5
497-8290
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PD84010-E
Manufacturer:
ST
Quantity:
20 000
PD84010-E, PD84010S-E
1
1.1
1.2
Electrical data
Maximum ratings
Table 2.
Thermal data
Table 3.
V
Symbol
Symbol
(BR)DSS
P
T
R
V
DISS
T
STG
I
thJC
GS
D
J
Absolute maximum ratings (T
Thermal data
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation (@ T
Max. operating junction temperature
Storage temperature
Junction - case thermal resistance
Parameter
Parameter
C
= 70°C)
CASE
= 25°C)
-65 to +150
-0.5 to +15
Value
Value
165
1.0
40
95
8
Electrical data
°C/W
Unit
Unit
°C
°C
W
V
V
A
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