BLF242,112 NXP Semiconductors, BLF242,112 Datasheet - Page 3

• Manufacturer Part Number: BLF242,112
• Description: TRANSISTOR RF DMOS SOT123A
• Manufacturer: NXP Semiconductors

Specifications of BLF242,112

• Package / Case: SOT-123A
• Transistor Type: N-Channel
• Frequency: 175MHz
• Gain: 16dB
• Voltage - Rated: 65V
• Current Rating: 1A
• Current - Test: 10mA
• Voltage - Test: 28V
• Power - Output: 5W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 5 Ohm @ 1 V
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1 A
• Power Dissipation: 16000 mW
• Maximum Operating Temperature: + 200 C
• Application: HF/VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 5W
• Power Gain (typ)@vds: 16@28VdB
• Frequency (max): 175MHz
• Package Type: SOT-123A
• Pin Count: 4
• Forward Transconductance (typ): 0.24S
• Drain Source Resistance (max): 5000@1Vmohm
• Input Capacitance (typ)@vds: 13@28VpF
• Output Capacitance (typ)@vds: 9.4@28VpF
• Reverse Capacitance (typ): 1.7@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 60%
• Mounting: Screw
• Mode Of Operation: CW Class-B
• Number Of Elements: 1
• Power Dissipation (max): 16000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2396; 933817030112; BLF242; BLF242

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
2003 Oct 13
V
V
I
P
T
T
R
R
handbook, halfpage
D
stg
j
SYMBOL
SYMBOL
DS
GS
tot
th j-mb
th mb-h
HF-VHF power MOS transistor
(1) Current is this area may be limited by R
(2) T
10
10
(A)
I D
10
mb
1
1
2
1
= 25 C.
(1)
thermal resistance from junction to
mounting base
thermal resistance from mounting base to
heatsink
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation
storage temperature
junction temperature
Fig.2 DC SOAR.
10
PARAMETER
PARAMETER
V DS (V)
DSon
.
(2)
MRA918
10
2
3
T
T
T
mb
mb
mb
handbook, halfpage
(1) Continuous operation.
(2) Short-time operation during mismatch.
= 25 C; P
= 25 C; P
P tot
(W)
25 C
20
10
CONDITIONS
CONDITIONS
0
0
tot
tot
Fig.3 Power derating curves.
= 16 W
= 16 W
50
(2)
(1)
MIN.
65
VALUE
100
0.3
11
Product specification
T h ( C)
65
1
16
150
200
MAX.
20
MPG141
BLF242
150
UNIT
K/W
K/W
V
V
A
W
C
C
UNIT