BF1105WR,115 NXP Semiconductors, BF1105WR,115 Datasheet - Page 6

• Manufacturer Part Number: BF1105WR,115
• Description: MOSFET N-CH 7V 30MA SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BF1105WR,115

• Package / Case: CMPAK-4
• Current Rating: 30mA
• Frequency: 800MHz
• Gain: 20dB
• Transistor Type: N-Channel Dual Gate
• Noise Figure: 1.7dB
• Voltage - Test: 5V
• Configuration: Single Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 7 V
• Gate-source Breakdown Voltage: 7 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Current - Test: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934050320115::BF1105WR T/R::BF1105WR T/R

NXP Semiconductors
1997 Dec 02
handbook, halfpage
handbook, halfpage
N-channel dual-gate MOS-FETs
V
f
unw
V
T
(dBμV)
Fig.11 Unwanted voltage for 1% cross-modulation
DS
V unw
Fig.9
j
G2-S
(mA)
= 25 C.
I D
= 60 MHz; T
= 5 V; V
110
100
16
12
90
80
= 4 V.
8
4
0
0
0
as a function of gain reduction;
typical values (see Fig.18).
Drain current as a function of drain-source
voltage; typical values.
G2nom
amb
= 4 V; I
= 25 C.
2
20
Dnom
= I
self bias
4
; f
w
40
gain reduction (dB)
= 50 MHz;
6
V DS (V)
fMGM248
MGM250
60
8
6
handbook, halfpage
V
Fig.10 Drain current as a function of gate 1 current;
DS
(mA)
I D
= 5 V; V
16
12
8
4
0
BF1105; BF1105R; BF1105WR
−8
typical values.
G2-S
= 4 V; T
−6
j
= 25 C.
−4
Product specification
−2
I G1 (μA)
MGM249
0