BF998WR,115 NXP Semiconductors, BF998WR,115 Datasheet

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DATA SHEET BF998WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1995 Apr 25 DISCRETE SEMICONDUCTORS 1997 Sep 05 ...

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... NXP Semiconductors N-channel dual-gate MOS-FET FEATURES  High forward transfer admittance  Short channel transistor with high forward transfer admittance to input capacitance ratio  Low noise gain controlled amplifier GHz. APPLICATIONS  VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment ...

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... NXP Semiconductors N-channel dual-gate MOS-FET LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V drain-source voltage DS I drain current D I gate 1 current G1 I gate 2 current G2 P total power dissipation tot T storage temperature stg T operating junction temperature j Note 1 ...

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... NXP Semiconductors N-channel dual-gate MOS-FET THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to ambient th j-a R thermal resistance from junction to soldering point th j-s Notes 1. Device mounted on a printed-circuit board the temperature at the soldering point of the source lead. s STATIC CHARACTERISTICS = 25 C; unless otherwise specified. ...

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... NXP Semiconductors N-channel dual-gate MOS-FET (mA C. T amb Fig.3 Transfer characteristics; typical values (mS −1600 −1200 −800 = 25  amb Fig.5 Drain current as a function of gate 1 voltage; typical values. 1997 Sep 05 MGC471 ( MGC472 max typ min −400 0 400 V (mV (mA G2 C. amb Fig.4 Output characteristics; typical values. ...

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... NXP Semiconductors N-channel dual-gate MOS-FET (mS −  amb Fig.7 Forward transfer admittance as a function of gate 1 voltage; typical values. 2 (pF) 2.2 2.0 1.8 1.6 1.4 −2.4 −1.6 −0 MHz G2-S amb Fig.9 Gate 1 input capacitance as a function of gate 1-source voltage; typical values. ...

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... NXP Semiconductors N-channel dual-gate MOS-FET (mS G2  mA amb Fig.11 Input admittance as a function of the frequency; typical values (mS) ϕ G2  mA amb Fig.13 Forward transfer admittance and phase as a function of frequency; typical values. 1997 Sep 05 MGC466 (MHz) MGC468 2 10 ϕ fs (deg (MHz (μS) ϕ ...

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... NXP Semiconductors N-channel dual-gate MOS-FET C1 5 Ω input 140 kΩ mS 0.5 mS nH; 4 turns 0.8 mm copper wire, internal diameter 4 mm 160 nH; 3 turns 0.8 mm copper wire, internal diameter 8 mm. Tapped at approximately half a turn from the cold side, to adjust G 1997 Sep 05 V AGC ...

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... NXP Semiconductors N-channel dual-gate MOS-FET V DD 140 kΩ 100 kΩ Ω input C1 2- 3 200 nH; 11 turns 0.5 mm copper wire, without spacing, internal diameter 3 mm cm, silvered 0.8 mm copper wire above ground plane cm, silvered 0.5 mm copper wire above ground plane. 0 ΔG tr (dB) − ...

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... NXP Semiconductors N-channel dual-gate MOS-FET PACKAGE OUTLINE Plastic surface-mounted package; reverse pinning; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 0.4 0.7 1.1 mm 0.1 0.8 0.3 0.5 OUTLINE VERSION IEC SOT343R 1997 Sep scale 0.25 2.2 1.35 1.3 1.15 0.10 1.8 1 ...

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... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...

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... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

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... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...