BF1211R,215 NXP Semiconductors, BF1211R,215 Datasheet - Page 9

• Manufacturer Part Number: BF1211R,215
• Description: MOSFET N-CH DUAL GATE 6V SOT143R
• Manufacturer: NXP Semiconductors

Specifications of BF1211R,215

• Package / Case: SC-61B
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 29dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 0.9dB
• Current - Test: 15mA
• Voltage - Test: 5V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Configuration: Single Dual Gate
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 30 mA
• Power Dissipation: 180 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1960-2; 934057512215; BF1211R

NXP Semiconductors
2003 Dec 16
handbook, halfpage
handbook, halfpage
N-channel dual-gate MOS-FETs
V
I
Fig.17 Input admittance as a function of frequency;
V
I
Fig.19 Forward transfer admittance and phase as
D
D
DS
DS
(mS)
(mS)
|y fs |
= 15 mA; T
= 15 mA; T
y is
10
10
10
= 5 V; V
= 5 V; V
10
10
−1
1
1
2
2
10
10
typical values.
functions of frequency; typical values.
G2
G2
amb
amb
= 4 V.
= 4 V.
= 25 C.
= 25 C.
10
10
2
2
b is
|y fs |
g is
ϕ fs
f (MHz)
f (MHz)
MDB841
MDB843
10
10
3
3
−10
−10
−1
(deg)
ϕ fs
2
9
handbook, halfpage
handbook, halfpage
V
I
Fig.18 Reverse transfer admittance and phase as
Fig.20 Output admittance as a function of
V
I
D
D
DS
(mS)
DS
(μS)
|y rs |
y os
= 15 mA; T
= 15 mA; T
10
10
10
10
= 5 V; V
= 5 V; V
10
10
−1
−2
BF1211; BF1211R; BF1211WR
1
1
3
2
10
10
a function of frequency; typical values.
frequency; typical values.
G2
G2
amb
amb
= 4 V.
= 4 V.
= 25 C.
= 25 C.
10
10
2
2
b os
g os
ϕ rs
|y rs |
f (MHz)
f (MHz)
Product specification
MDB842
MDB844
10
10
3
3
−10
−10
−10
−1
(deg)
ϕ rs
3
2