BF904R,215 NXP Semiconductors, BF904R,215 Datasheet - Page 7
![MOSFET N-CH 7V 30MA SOT143R](/photos/5/30/53004/568-sot-143b_sml.jpg)
BF904R,215
Manufacturer Part Number
BF904R,215
Description
MOSFET N-CH 7V 30MA SOT143R
Manufacturer
NXP Semiconductors
Datasheet
1.BF904R215.pdf
(14 pages)
Specifications of BF904R,215
Package / Case
SC-61B
Current Rating
30mA
Frequency
200MHz
Transistor Type
N-Channel Dual Gate
Noise Figure
1dB
Current - Test
10mA
Voltage - Test
5V
Configuration
Dual
Continuous Drain Current
30 mA
Drain-source Breakdown Voltage
7 V
Gate-source Breakdown Voltage
6 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
200 mW
Transistor Polarity
N-Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934020440215::BF904R T/R::BF904R T/R
NXP Semiconductors
handbook, halfpage
handbook, halfpage
N-channel dual gate MOS-FETs
V
R
V
R
Fig.14 Drain current as a function of gate 2 voltage;
(mA)
DS
G1
DS
G1
(mA)
I D
I D
Fig.12 Drain current as a function of gate 1
= 5 V; V
= 120 k (connected to V
= 5 V; T
= 120 k (connected to V
12
12
8
4
0
8
4
0
0
0
typical values; see Fig.20.
j
G2-S
= 25 C.
supply voltage (= V
see Fig.20.
= 4 V.
1
2
2
GG
GG
); T
).
j
= 25 C.
3
GG
); typical values;
4
V
GG
V
G2 S
4
V
= 5 V
GG
4 V
4.5 V
3.5 V
3 V
MLD275
MLD276
(V)
(V)
Rev. 06 - 13 November 2007
5
6
handbook, halfpage
handbook, halfpage
V
R
V
R
G2-S
DS
G1
G1
(mA)
( A)
I G1
I D
Fig.15 Gate 1 current as a function of gate 2
connected to V
= 5 V; T
= 120 k (connected to V
20
15
10
Fig.13 Drain current as a function of gate 1
= 4 V.
40
30
20
10
5
0
0
0
0
j
= 25 C.
voltage; typical values; see Fig.20.
(= V
typical values; see Fig.20.
GG
2
GG
; T
j
) and drain supply voltage;
R
= 25 C.
2
G1
GG
= 47 k
).
4
BF904; BF904R
V
GG
68 k
4
Product specification
V
= V
V
6
GG
G2 S
DS
= 5 V
100 k
120 k
150 k
180 k
220 k
(V)
4 V
4.5 V
3.5 V
3 V
MLD274
82 k
MLB945
(V)
7 of 14
8
6