BF556C,215 NXP Semiconductors, BF556C,215 Datasheet - Page 8

• Manufacturer Part Number: BF556C,215
• Description: MOSFET N-CH 30V 10MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BF556C,215

• Package / Case: SST3 (SOT-23-3)
• Transistor Type: N-Channel JFET
• Voltage - Rated: 30V
• Current Rating: 18mA
• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 30 V
• Gate-source Cutoff Voltage: - 0.5 V to - 7.5 V
• Gate-source Breakdown Voltage: - 30 V
• Maximum Drain Gate Voltage: - 30 V
• Drain Current (idss At Vgs=0): 11 mA to 18 mA
• Continuous Drain Current: 18 mA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Frequency: -
• Gain: -
• Noise Figure: -
• Current - Test: -
• Voltage - Test: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934021490215; BF556C T/R; BF556C T/R

Philips Semiconductors
9397 750 13393
Product data sheet
Fig 12. Gate current as a function of junction
Fig 14. Input capacitance; typical values.
I
(pA)
(pF)
C
GSS
10
iss
10
10
10
1
3
2
1
0
3
2
1
V
temperature; typical values.
V
50
10
DS
DS
= 0 V; V
= 15 V.
8
0
GS
= 20 V.
6
50
4
100
2
T
V
j
GS
( C)
mrc150
mrc140
(V)
150
Rev. 03 — 5 August 2004
0
BF556A; BF556B; BF556C
Fig 13. Reverse transfer capacitance; typical values.
Fig 15. Common-source input admittance; typical
N-channel silicon junction field-effect transistors
g
(mS)
C
(1) b
(2) g
(pF)
is ,
10
10
rss
10
b
0.8
0.6
0.4
0.2
10
is
1
0
1
2
1
2
V
V
values.
10
10
is
is
DS
DS
.
.
= 15 V.
= 10 V; I
8
D
= 1 mA; T
6
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
10
amb
2
= 25 C.
4
(1)
(2)
f (MHz)
2
V
GS
mrc134
mrc142
(V)
10
0
3
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