NE3512S02-T1D-A CEL, NE3512S02-T1D-A Datasheet - Page 3

• Manufacturer Part Number: NE3512S02-T1D-A
• Description: HJ-FET NCH 13.5DB S02
• Manufacturer: CEL

Specifications of NE3512S02-T1D-A

• Transistor Type: HFET
• Frequency: 12GHz
• Gain: 13.5dB
• Voltage - Rated: 4V
• Current Rating: 70mA
• Noise Figure: 0.35dB
• Current - Test: 10mA
• Voltage - Test: 2V
• Package / Case: S02
• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 55 mS
• Gate-source Breakdown Voltage: - 3 V
• Continuous Drain Current: 10 mA
• Power Dissipation: 165 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document No. PG10592EJ01V0DS (1st edition)
Date Published February 2006 CP(N)
Printed in Japan
FEATURES
• Super low noise figure and high associated gain
• Micro-X plastic (S02) package
APPLICATIONS
• C to Ku-band DBS LNB
• Other C to Ku-band communication systems
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
NE3512S02-T1C
NE3512S02-T1D
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Remark To order evaluation samples, contact your nearby sales office.
Note Mounted on 1.08 cm
Part Number
NF = 0.35 dB TYP., G
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Part number for sample order: NE3512S02
Parameter
NE3512S02-T1C-A
NE3512S02-T1D-A
C TO Ku BAND SUPER LOW NOISE AMPLIFIER
Order Number
a
2
= 13.5 dB TYP. @ f = 12 GHz
× 1.0 mm (t) glass epoxy PCB
HETERO JUNCTION FIELD EFFECT TRANSISTOR
Symbol
P
S02 (Pb-Free)
V
V
T
tot
T
I
I
DS
GS
D
G
stg
ch
Note
Package
A
N-CHANNEL HJ-FET
= +25°C)
DATA SHEET
−65 to +125
2 kpcs/reel
10 kpcs/reel
Ratings
Quantity
+125
I
100
165
−3
DSS
4
Marking
C
Unit
mW
mA
µ
°C
°C
V
V
A
• 8 mm wide embossed taping
• Pin 4 (Gate) faces the perforation side
of the tape

NEC Compound Semiconductor Devices, Ltd. 2005, 2006
NE3512S02
Supplying Form