NE3512S02-T1D-A CEL, NE3512S02-T1D-A Datasheet - Page 4

• Manufacturer Part Number: NE3512S02-T1D-A
• Description: HJ-FET NCH 13.5DB S02
• Manufacturer: CEL

Specifications of NE3512S02-T1D-A

• Transistor Type: HFET
• Frequency: 12GHz
• Gain: 13.5dB
• Voltage - Rated: 4V
• Current Rating: 70mA
• Noise Figure: 0.35dB
• Current - Test: 10mA
• Voltage - Test: 2V
• Package / Case: S02
• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 55 mS
• Gate-source Breakdown Voltage: - 3 V
• Continuous Drain Current: 10 mA
• Power Dissipation: 165 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

RECOMMENDED OPERATING CONDITIONS (T
ELECTRICAL CHARACTERISTICS (T
2
Drain to Source Voltage
Drain Current
Input Power
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Transconductance
Noise Figure
Associated Gain
Parameter
Parameter
Symbol
Symbol
V
I
V
I
GS (off)
NF
P
GSO
G
DSS
g
I
DS
D
m
in
a
A
V
V
V
V
V
Data Sheet PG10592EJ01V0DS
= +25°C, unless otherwise specified)
GS
DS
DS
DS
DS
MIN.
1
5
−
= −3 V
= 2 V, V
= 2 V, I
= 2 V, I
= 2 V, I
D
D
D
Test Conditions
TYP.
GS
A
= 100
= 10 mA
= 10 mA, f = 12 GHz
10
2
−
= +25°C)
= 0 V
µ
A
MAX.
15
3
0
dBm
Unit
mA
V
MIN.
−0.2
12.5
15
40
−
−
TYP.
−0.7
0.35
13.5
0.5
40
55
MAX.
−2.0
0.5
10
70
NE3512S02
−
−
Unit
mA
mS
µ
dB
dB
V
A