NE3512S02-T1D-A CEL, NE3512S02-T1D-A Datasheet - Page 7

• Manufacturer Part Number: NE3512S02-T1D-A
• Description: HJ-FET NCH 13.5DB S02
• Manufacturer: CEL

Specifications of NE3512S02-T1D-A

• Transistor Type: HFET
• Frequency: 12GHz
• Gain: 13.5dB
• Voltage - Rated: 4V
• Current Rating: 70mA
• Noise Figure: 0.35dB
• Current - Test: 10mA
• Voltage - Test: 2V
• Package / Case: S02
• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 55 mS
• Gate-source Breakdown Voltage: - 3 V
• Continuous Drain Current: 10 mA
• Power Dissipation: 165 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

RF MEASURING LAYOUT PATTERN (REFERENCE ONLY) (UNIT: mm)
Reference Plane
(Calibration Plane)
φ
0.3 TH
RT/duroid 5880/ROGERS
t = 0.254 mm
εr = 2.20
tan delta = 0.0009 @10 GHz
1.7
Data Sheet PG10592EJ01V0DS
L2–uX Ver. 1
1.7 mm/R.P.
2.80
2.60
2.06
0.64
6.0
2.6
1.7
Reference Plane
(Calibration Plane)
NE3512S02
5