NE3512S02-T1D-A CEL, NE3512S02-T1D-A Datasheet - Page 7
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NE3512S02-T1D-A
Manufacturer Part Number
NE3512S02-T1D-A
Description
HJ-FET NCH 13.5DB S02
Manufacturer
CEL
Specifications of NE3512S02-T1D-A
Transistor Type
HFET
Frequency
12GHz
Gain
13.5dB
Voltage - Rated
4V
Current Rating
70mA
Noise Figure
0.35dB
Current - Test
10mA
Voltage - Test
2V
Package / Case
S02
Mounting Style
SMD/SMT
Forward Transconductance Gfs (max / Min)
55 mS
Gate-source Breakdown Voltage
- 3 V
Continuous Drain Current
10 mA
Power Dissipation
165 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NE3512S02-T1D-A
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
RF MEASURING LAYOUT PATTERN (REFERENCE ONLY) (UNIT: mm)
Reference Plane
(Calibration Plane)
φ
0.3 TH
RT/duroid 5880/ROGERS
t = 0.254 mm
εr = 2.20
tan delta = 0.0009 @10 GHz
1.7
Data Sheet PG10592EJ01V0DS
L2–uX Ver. 1
1.7 mm/R.P.
2.80
2.60
2.06
0.64
6.0
2.6
1.7
Reference Plane
(Calibration Plane)
NE3512S02
5