NE3512S02-T1D-A CEL, NE3512S02-T1D-A Datasheet - Page 5

• Manufacturer Part Number: NE3512S02-T1D-A
• Description: HJ-FET NCH 13.5DB S02
• Manufacturer: CEL

Specifications of NE3512S02-T1D-A

• Transistor Type: HFET
• Frequency: 12GHz
• Gain: 13.5dB
• Voltage - Rated: 4V
• Current Rating: 70mA
• Noise Figure: 0.35dB
• Current - Test: 10mA
• Voltage - Test: 2V
• Package / Case: S02
• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 55 mS
• Gate-source Breakdown Voltage: - 3 V
• Continuous Drain Current: 10 mA
• Power Dissipation: 165 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (T
Remark The graphs indicate nominal characteristics.
250
200
150
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
50
80
60
40
20
–2.0
0
0
MINIMUM NOISE FIGURE,
2
ASSOCIATED GAIN vs. FREQUENCY
DRAIN CURRENT vs.
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
GATE TO SOURCE VOLTAGE
4
Gate to Source Voltage V
50
Ambient Temperature T
6
Frequency f (GHz)
Mounted on Glass Epoxy PCB
(1.08 cm
100
8
G
NF
a
–1.0
10
min
2
150
× 1.0 mm (t) )
12
A
GS
14
(˚C)
A
V
V
I
200
(V)
D
DS
= +25°C, unless otherwise specified)
DS
= 10 mA
= 2 V
16
= 2 V
Data Sheet PG10592EJ01V0DS
250
18
0
25
20
15
10
5
0
100
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
MINIMUM NOISE FIGURE,
80
60
40
20
ASSOCIATED GAIN vs. DRAIN CURRENT
0
0
f = 12 GHz
V
DS
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
= 2 V
Drain to Source Voltage V
5
Drain Current I
10
NF
1.0
G
min
a
15
D
(mA)
DS
V
(V)
NE3512S02
20
GS
–0.2 V
–0.4 V
–0.6 V
= 0 V
2.0
25
16
14
12
10
8
6
4
2
0
3