ATF-33143-TR1G Avago Technologies US Inc., ATF-33143-TR1G Datasheet - Page 14

• Manufacturer Part Number: ATF-33143-TR1G
• Description: IC PHEMT 1.9GHZ 80MA LN SOT-343
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-33143-TR1G

• Gain: 15dB
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Voltage - Rated: 5.5V
• Current Rating: 305mA
• Noise Figure: 0.5dB
• Current - Test: 80mA
• Voltage - Test: 4V
• Power - Output: 22dBm
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Drain Source Voltage Vds: 5.5V
• Power Dissipation Pd: 600mW
• Noise Figure Typ: 0.5dB
• Rf Transistor Case: SOT-343
• No. Of Pins: 4
• Frequency Max: 6GHz
• Frequency Min: 450MHz
• Drain Current Idss Max: 305mA
• Channel Type: N
• Configuration: Single Dual Source
• Gate-source Voltage (max): 5V
• Pin Count: 3 +Tab
• Drain-gate Voltage (max): -5V
• Drain-source Volt (max): 5.5V
• Operating Temperature (min): -65C
• Operating Temperature (max): 160C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Drain Current (max): 305mA
• Package Type: SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Noise Parameter Applications Information
F
measurements while the F
extrapolated. The F
16 noise figure measurements made at 16 different
impedances using an ATN NP5 test system. From these
measurements, a true F
the true minimum noise figure of the device when the
device is presented with an impedance matching network
that transforms the source impedance, typically 50Ω, to
an impedance represented by the reflection coefficient
Γ
will present Γ
circuit losses. The noise figure of the completed amplifier
is equal to the noise figure of the device plus the losses
of the matching network preceding the device. The
noise figure of the device is equal to F
device is presented with Γ
of the matching network is other than Γ
figure of the device will be greater than F
the following equation.
NF = F
Where R
the optimum reflection coefficient required to produce
F
impedance actually presented to the device. The losses
Reliability Data
14
min
min
o
Channel
Temperature
(
100
125
140
150
160
180
NOT
recommended
Predicted failures with temperature extrapolated from failure distribution and activation energy data of higher temperature
operational life STRIFE of PHEMT process
. The designer must design a matching network that
o
C)
and Γ
values at 2 GHz and higher are based on
min
n
/Z
+ 4 R
s
o
is the reflection coefficient of the source
is the normalized noise resistance, Γ
o
Zo
n
to the device with minimal associated
Nominal Failures per million (FPM)
for different durations
(FITs)
1000
hours
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
min
(|1 + Γ
|Γ
min
values are based on a set of
s
– Γ
o
o
mins
is calculated. F
|
. If the reflection coefficient
2
o
)(1 – Γ
1 year
<0.1
<0.1
<0.1
<0.1
<0.1
4400
|
2
below 2 GHz have been
s
|
2
)
min
5 year
<0.1
<0.1
<0.1
2
920
450K
o
, then the noise
only when the
min
min
represents
based on
10 year
<0.1
<0.1
<0.1
140
21K
830K
o
is
30 year
<0.1
<0.1
160
26K
370K
1000K
of the matching networks are non-zero and they will
also add to the noise figure of the device creating a
higher amplifier noise figure. The losses of the matching
networks are related to the Q of the components and
associated printed circuit board loss. Γ
low at higher frequencies and increases as frequency is
lowered. Larger gate width devices will typically have a
lower Γ
Typically for FETs, the higher Γ
impedance much higher than 50Ω is required for the
device to produce F
lower L Band frequencies, the required impedance can
be in the vicinity of several thousand ohms. Matching to
such a high impedance requires very hi-Q components
in order to minimize circuit losses. As an example at
900 MHz, when airwwound coils (Q > 100) are used for
matching networks, the loss can still be up to 0.25 dB
which will add directly to the noise figure of the device.
Using muiltilayer molded inductors with Qs in the 30 to
50 range results in additional loss over the airwound coil.
Losses as high as 0.5 dB or greater add to the typical 0.15
dB F
of nearly 0.65 dB. A discussion concerning calculated
and measured circuit losses and their effect on amplifier
noise figure is covered in Avago Application 1085.
min
o
of the device creating an amplifier noise figure
for different durations
(FITs)
1000
hours
<0.1
<0.1
<0.1
<0.1
<0.1
21
as compared to narrower gate width devices.
90% confidence Failures per million (FPM)
1 year
<0.1
<0.1
<0.1
0.3
67
53K
min
. At VHF frequencies and even
5 year
<0.1
<0.1
6
780
24K
590K
o
usually infers that an
10 year
<0.1
<0.1
160
8800
120K
850K
o
is typically fairly
30 year
<0.1
11
9.3K
131K
520K
1000K