ATF-33143-TR1G Avago Technologies US Inc., ATF-33143-TR1G Datasheet - Page 4
![IC PHEMT 1.9GHZ 80MA LN SOT-343](/photos/5/63/56361/sot-343_pkg_sml.jpg)
ATF-33143-TR1G
Manufacturer Part Number
ATF-33143-TR1G
Description
IC PHEMT 1.9GHZ 80MA LN SOT-343
Manufacturer
Avago Technologies US Inc.
Datasheet
1.ATF-33143-TR1G.pdf
(18 pages)
Specifications of ATF-33143-TR1G
Gain
15dB
Transistor Type
pHEMT FET
Frequency
2GHz
Voltage - Rated
5.5V
Current Rating
305mA
Noise Figure
0.5dB
Current - Test
80mA
Voltage - Test
4V
Power - Output
22dBm
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Drain Source Voltage Vds
5.5V
Power Dissipation Pd
600mW
Noise Figure Typ
0.5dB
Rf Transistor Case
SOT-343
No. Of Pins
4
Frequency Max
6GHz
Frequency Min
450MHz
Drain Current Idss Max
305mA
Channel Type
N
Configuration
Single Dual Source
Gate-source Voltage (max)
5V
Pin Count
3 +Tab
Drain-gate Voltage (max)
-5V
Drain-source Volt (max)
5.5V
Operating Temperature (min)
-65C
Operating Temperature (max)
160C
Operating Temperature Classification
Military
Mounting
Surface Mount
Drain Current (max)
305mA
Package Type
SOT-343
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ATF-33143-TR1G
Manufacturer:
AVAGO
Quantity:
150 000
Company:
Part Number:
ATF-33143-TR1G
Manufacturer:
NS
Quantity:
9 030
Part Number:
ATF-33143-TR1G
Manufacturer:
AVAGO/安华高
Quantity:
20 000
ATF-33143 Typical Performance Curves
Notes:
1. Measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure at 4V 80 mA
2. Quiescent drain current, I
4
Figure 6. OIP3, IIP3 vs. Bias
Figure 8. P
Figure 10. NF and G
40
30
20
10
25
20
15
10
16
15
14
13
12
11
10
bias. This circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on production test
board requirements. Circuit losses have been de-embedded from actual measurements.
frequency and dc bias point. At lower values of I
P
active biasing.
0
5
0
1dB
0
0
0
and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with
G
NF
1dB
a
20
20
20
vs. Bias
40
40
40
a
vs. Bias
[1,2]
I
I
I
DSQ
DSQ
DSQ
at 2 GHz.
60
60
60
[1]
(mA)
(mA)
(mA)
[1]
at 2 GHz.
at 2 GHz.
DSQ
80
80
80
, is set with zero RF drive applied. As P
100
100
100
2 V
3 V
4 V
2 V
3 V
4 V
2 V
3 V
4 V
120
120
120
1.4
1.2
1.0
0.8
0.6
0.4
0.2
DSQ
the device is running closer to class B as power output approaches P
Figure 7. OIP3, IIP3 vs. Bias
Figure 9. P
900 MHz.
Figure 11. NF and G
40
30
20
10
25
20
15
10
22
21
20
19
18
17
16
0
5
0
0
0
0
G
NF
a
1dB
1dB
20
20
20
vs. Bias
2 V
3 V
4 V
is approached, the drain current may increase or decrease depending on
40
40
40
a
vs. Bias
[1,2]
I
I
I
DSQ
DSQ
DSQ
Tuned for NF @ 4V, 80 mA at
60
60
60
[1]
(mA)
(mA)
(mA)
[1]
at 900 MHz.
at 900 MHz.
80
80
80
100
100
100
2 V
3 V
4 V
2 V
3 V
4 V
120
120
120
1.2
1.0
0.8
0.6
0.4
0.2
0
1dB
. This results in higher