ATF-33143-TR1G Avago Technologies US Inc., ATF-33143-TR1G Datasheet - Page 4

• Manufacturer Part Number: ATF-33143-TR1G
• Description: IC PHEMT 1.9GHZ 80MA LN SOT-343
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-33143-TR1G

• Gain: 15dB
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Voltage - Rated: 5.5V
• Current Rating: 305mA
• Noise Figure: 0.5dB
• Current - Test: 80mA
• Voltage - Test: 4V
• Power - Output: 22dBm
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Drain Source Voltage Vds: 5.5V
• Power Dissipation Pd: 600mW
• Noise Figure Typ: 0.5dB
• Rf Transistor Case: SOT-343
• No. Of Pins: 4
• Frequency Max: 6GHz
• Frequency Min: 450MHz
• Drain Current Idss Max: 305mA
• Channel Type: N
• Configuration: Single Dual Source
• Gate-source Voltage (max): 5V
• Pin Count: 3 +Tab
• Drain-gate Voltage (max): -5V
• Drain-source Volt (max): 5.5V
• Operating Temperature (min): -65C
• Operating Temperature (max): 160C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Drain Current (max): 305mA
• Package Type: SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

ATF-33143 Typical Performance Curves
Notes:
1. Measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure at 4V 80 mA
2. Quiescent drain current, I
4
Figure 6. OIP3, IIP3 vs. Bias
Figure 8. P
Figure 10. NF and G
40
30
20
10
25
20
15
10
16
15
14
13
12
11
10
bias. This circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on production test
board requirements. Circuit losses have been de-embedded from actual measurements.
frequency and dc bias point. At lower values of I
P
active biasing.
0
5
0
1dB
0
0
0
and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with
G
NF
1dB
a
20
20
20
vs. Bias
40
40
40
a
vs. Bias
[1,2]
I
I
I
DSQ
DSQ
DSQ
at 2 GHz.
60
60
60
[1]
(mA)
(mA)
(mA)
[1]
at 2 GHz.
at 2 GHz.
DSQ
80
80
80
, is set with zero RF drive applied. As P
100
100
100
2 V
3 V
4 V
2 V
3 V
4 V
2 V
3 V
4 V
120
120
120
1.4
1.2
1.0
0.8
0.6
0.4
0.2
DSQ
the device is running closer to class B as power output approaches P
Figure 7. OIP3, IIP3 vs. Bias
Figure 9. P
900 MHz.
Figure 11. NF and G
40
30
20
10
25
20
15
10
22
21
20
19
18
17
16
0
5
0
0
0
0
G
NF
a
1dB
1dB
20
20
20
vs. Bias
2 V
3 V
4 V
is approached, the drain current may increase or decrease depending on
40
40
40
a
vs. Bias
[1,2]
I
I
I
DSQ
DSQ
DSQ
Tuned for NF @ 4V, 80 mA at
60
60
60
[1]
(mA)
(mA)
(mA)
[1]
at 900 MHz.
at 900 MHz.
80
80
80
100
100
100
2 V
3 V
4 V
2 V
3 V
4 V
120
120
120
1.2
1.0
0.8
0.6
0.4
0.2
0
1dB
. This results in higher